# US 12,183,557 B2 · Apparatus and methods for controlling ion energy distribution

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- Number: US 12,183,557 B2
- Document ID: US12183557B2
- Status: Granted
- Kind: B2
- Application number: 18/244,544
- Filed: 2023-09-11
- Published: 2023-12-28
- Granted: 2024-12-31
- Earliest claimed: 2020-11-16
- Assignees: Applied Materials, Inc.
- Applicants: Applied Materials, Inc.
- Inventors: Linying Cui; James Rogers
- Web page: https://patentgrep.com/patent/US12183557B2

## CPC

- H01J 37/32697: {Electrostatic control}
- H01J 37/32422: {Arrangement for selecting ions or species in the plasma}
- H01J 37/32577: {Electrical connecting means}
- H01J 37/32642: {Focus rings}
- H01J 37/32706: {Polarising the substrate}
- H01J 37/32715: {Workpiece holder}
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

Embodiments of the present disclosure generally relate to apparatus and methods for controlling an ion energy distribution during plasma processing. In an embodiment, the apparatus includes a substrate support that has a body having a substrate electrode for applying a substrate voltage to a substrate, and an edge ring electrode embedded for applying an edge ring voltage to an edge ring. The apparatus further includes a substrate voltage control circuit coupled to the substrate electrode, and an edge ring voltage control circuit coupled to the edge ring electrode. The substrate electrode, edge ring electrode, or both are coupled to a power module configured to actively control an energy distribution function width of ions reaching the substrate, edge ring, or both. Methods for controlling an energy distribution function width of ions during substrate processing are also described.

## Claims

### Claim 1

A substrate support, comprising:
a substrate electrode for applying a substrate voltage to a substrate, the substrate electrode coupled to a power module, the power module configured to actively control an energy distribution function width of ions reaching the substrate, the power module comprising a voltage source, a current source, or a combination thereof; and
a substrate voltage control circuit coupled to the substrate electrode, the substrate voltage control circuit comprising a main pulser coupled to a current return path, the current return path coupled to the power module and to a processing chamber.

### Claim 2 (depends on 1)

The substrate support of claim 1, wherein the power module comprises a transistor-transistor logic signal source coupled in parallel with a switch, and a shaped DC pulse voltage source.

### Claim 3 (depends on 2)

The substrate support of claim 2, wherein the shaped DC pulse voltage source controls a slope of voltage waveform of the substrate voltage.

### Claim 4 (depends on 1)

The substrate support of claim 1, wherein the power module comprises a transistor-transistor logic signal source coupled in parallel with a switch and a diode.

### Claim 5 (depends on 1)

The substrate support of claim 1, wherein the power module comprises a transistor-transistor logic signal source coupled in parallel with a DC voltage source.

### Claim 6 (depends on 5)

The substrate support of claim 5, wherein the DC voltage source coupled in series to a resistor.

### Claim 7 (depends on 6)

The substrate support of claim 6, wherein the DC voltage source coupled in series to the resistor controls a slope of voltage waveform of the substrate voltage.

### Claim 8 (depends on 1)

The substrate support of claim 1, wherein the power module comprises a transistor-transistor logic signal source coupled in parallel with a switch, a diode, and a DC voltage source.

### Claim 9

A substrate support, comprising:
a substrate electrode for applying a substrate voltage to a substrate; and
a substrate voltage control circuit coupled to the substrate electrode, wherein:
the substrate electrode is coupled to a power module configured to actively control an energy distribution function width of ions reaching the substrate; and
the substrate voltage control circuit comprises a main pulser coupled to the power module, the power module coupled to a processing chamber, the power module comprising a voltage source, a current source, or a combination thereof.

### Claim 10 (depends on 9)

The substrate support of claim 9, wherein a blocking capacitance is coupled to both the main pulser and the power module.

### Claim 11 (depends on 9)

The substrate support of claim 9, wherein the power module comprises a transistor-transistor logic signal source coupled in parallel with a switch, the switch coupled in parallel to a diode and a DC voltage source, the DC voltage source coupled in series to a resistor.

### Claim 12 (depends on 11)

The substrate support of claim 11, wherein the DC voltage source coupled in series to the resistor controls a slope of voltage waveform of the substrate voltage.

### Claim 13 (depends on 9)

The substrate support of claim 9, wherein the power module comprises a transistor-transistor logic signal source coupled in parallel with a switch, the switch coupled in parallel to a diode and a shaped DC pulse voltage source.

### Claim 14 (depends on 13)

The substrate support of claim 13, wherein the shaped DC pulse voltage source controls a slope of voltage waveform of the substrate voltage.

### Claim 15

A substrate support, comprising:
a substrate electrode for applying a substrate voltage to a substrate; and
a substrate voltage control circuit coupled to the substrate electrode, wherein:
the substrate electrode is coupled to a power module configured to actively control an energy distribution function width of ions reaching the substrate; and
the substrate voltage control circuit comprises:
a main pulser coupled to the power module, the power module coupled to a processing chamber, the power module is in parallel with a substrate chucking and bias compensation module, and the power module comprising a voltage source, a current source, or a combination thereof.

### Claim 16 (depends on 15)

The substrate support of claim 15, wherein a blocking capacitance is coupled to both the main pulser and the power module.

### Claim 17 (depends on 15)

The substrate support of claim 15, wherein the power module comprises a transistor-transistor logic signal source coupled in parallel with a switch, the switch coupled in parallel to a diode and a DC voltage source, the DC voltage source coupled in series to a resistor.

### Claim 18 (depends on 17)

The substrate support of claim 17, wherein the DC voltage source coupled in series to the resistor controls a slope of voltage waveform of the substrate voltage.

### Claim 19 (depends on 15)

The substrate support of claim 15, wherein the power module comprises a transistor-transistor logic signal source coupled in parallel with a switch, the switch coupled in parallel to a diode and a shaped DC pulse voltage source.

### Claim 20 (depends on 19)

The substrate support of claim 19, wherein the shaped DC pulse voltage source controls a slope of voltage waveform of the substrate voltage.

### Claim 21 (depends on 1)

The substrate support of claim 1, wherein the power module further comprises a diode.