# US 12,183,552 B2 · Substrate processing apparatus

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 12,183,552 B2
- Document ID: US12183552B2
- Status: Granted
- Kind: B2
- Application number: 17/491,685
- Filed: 2021-10-01
- Published: 2022-04-14
- Granted: 2024-12-31
- Earliest claimed: 2020-10-13
- Assignees: KELK Ltd.
- Applicants: KELK Ltd.
- Inventors: Atsushi Kobayashi; Wataru Omuro
- Web page: https://patentgrep.com/patent/US12183552B2

## CPC

- H01J 37/32532: {Electrodes}
- H01J 37/32082: {Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence)}
- H01J 37/32522: {Temperature}
- H01J 37/32724: {Temperature}
- H01J 37/32834: {Exhausting}
- H01J 2237/032: Mounting or supporting
- H01J 2237/06375: Arrangement of electrodes
- H01J 2237/3151: Etching
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

A substrate processing apparatus includes a chamber which has a processing room in which a substrate is processed, a cover which is provided in the processing room and is provided between the substrate and the chamber, and a heater which is provided only on the cover among the chamber and the cover and heats the cover.

## Claims

### Claim 1

A substrate processing apparatus comprising:
a chamber which has a processing room in which a substrate is processed;
a cover which is provided in the processing room and is provided in a place between the substrate and the chamber; and
a heater which is provided only on the cover and the heater heats the cover,
wherein the cover has an upper structure and a lower structure
the upper structure includes a first top wall that faces an upper surface of the substrate, a second top wall that faces the first top wall, a top wall side connecting member that connects the first top wall and the second top wall to each other, and an upper space that is a space between the first top wall, the second top wall, and the top wall side connecting member,
the lower structure includes a first peripheral wall that surrounds an outer periphery of the substrate, a second peripheral wall that surrounds an outer periphery of the first peripheral wall, a pair of peripheral wall side connecting members that connect the first peripheral wall and the second peripheral wall to each other, and an lower space is a space between the first peripheral wall, the second peripheral wall, and the pair of peripheral wall side connecting members;
wherein the upper space and the lower space, in which atmospheric pressure can be maintained, and
wherein the heater is provided in the upper space and lower space,
wherein the second top wall is provided at a distance from a chamber upper wall,
wherein the second peripheral wall is provided at a distance from a chamber peripheral wall,
wherein a space between the cover and the chamber is evacuated.

### Claim 2 (depends on 1)

The substrate processing apparatus according to claim 1, further comprising:
a stage which is provided in the processing room and has a placement surface on which the substrate is placed; and
a pressure adjusting device which has an exhaust port that opens in the processing room, which includes pumps for evacuating the processing room and an exhaust structure and which is capable of adjusting pressure in the processing room,
wherein the exhaust port is disposed below the placement surface.

### Claim 3 (depends on 2)

The substrate processing apparatus according to claim 2,
wherein a plurality of exhaust ports are provided, and
wherein the plurality of exhaust ports include
a first exhaust port which communicates between an outer periphery of the stage and an inner periphery of the cover, and
a second exhaust port which communicates between an outer periphery of the cover and an inner periphery of the chamber.

### Claim 4 (depends on 2)

The substrate processing apparatus according to claim 2,
wherein a plurality of the exhaust ports are disposed at intervals along an outer periphery of the stage.

### Claim 5 (depends on 1)

The substrate processing apparatus according to claim 1, further comprising:
a first electrode which is provided in the processing room and has a placement surface on which the substrate is placed; and
a second electrode which faces the placement surface,
wherein plasma can be generated between the first electrode and the second electrode.