# US 12,183,290 B2 · Electronic device

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- Number: US 12,183,290 B2
- Document ID: US12183290B2
- Status: Granted
- Kind: B2
- Application number: 18/232,463
- Filed: 2023-08-10
- Published: 2023-11-30
- Granted: 2024-12-31
- Earliest claimed: 2016-06-17
- Assignees: Innolux Corporation
- Applicants: InnoLux Corporation
- Inventors: Sheng-Feng Huang; Chien-Feng Shih
- Web page: https://patentgrep.com/patent/US12183290B2

## CPC

- G09G 3/3266: Details of drivers for scan electrodes
- G09G 3/20: for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix {no fixed position being assigned to or needed to be assigned to the individual characters or partial characters}
- G09G 3/3225: using an active matrix
- G09G 3/3233: with pixel circuitry controlling the current through the light-emitting element
- G11C 19/28: using semiconductor elements (G11C19/14, G11C19/36 take precedence)
- G11C 19/287: {Organisation of a multiplicity of shift registers}
- H10K 59/1213: {the pixel elements being TFTs}
- G09G 3/3677: {suitable for active matrices only}
- G09G 2300/043: Compensation electrodes or other additional electrodes in matrix displays related to distortions or compensation signals, e.g. for modifying TFT threshold voltage in column driver
- G09G 2310/0286: Details of a shift registers arranged for use in a driving circuit
- G09G 2310/0289: Details of voltage level shifters arranged for use in a driving circuit
- G09G 2310/08: Details of timing specific for flat panels, other than clock recovery
- G09G 2320/045: Compensation of drifts in the characteristics of light emitting or modulating elements
- G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00)
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

An electronic device includes a substrate, a first transistor, a second transistor and a conductor. The first transistor is disposed on the substrate and comprises an oxide semiconductor layer. The second transistor is disposed on the substrate and comprises a silicon semiconductor layer. The conductor is electrically connected to the oxide semiconductor layer and the silicon semiconductor layer.

## Claims

### Claim 1

An electronic device, comprising:
a substrate;
a first transistor disposed on the substrate and comprising an oxide semiconductor layer;
a second transistor disposed on the substrate and comprising a silicon semiconductor layer; and
a conductor electrically connected to the oxide semiconductor layer and the silicon semiconductor layer.

### Claim 2 (depends on 1)

The electronic device as claimed in claim 1, wherein the second transistor further comprises a gate electrode disposed on the silicon semiconductor layer.

### Claim 3 (depends on 1)

The electronic device as claimed in claim 1, wherein the first transistor further comprises a gate electrode disposed under the oxide semiconductor layer.

### Claim 4 (depends on 1)

The electronic device as claimed in claim 1, wherein the silicon semiconductor layer is disposed between the substrate and the oxide semiconductor layer.

### Claim 5 (depends on 1)

The electronic device as claimed in claim 1, wherein the oxide semiconductor layer is disposed on the silicon semiconductor layer.

### Claim 6 (depends on 1)

The electronic device as claimed in claim 1, wherein the conductor is directly connected to the oxide semiconductor layer and the silicon semiconductor layer.

### Claim 7 (depends on 1)

The electronic device as claimed in claim 1, wherein the conductor is directly connected to the oxide semiconductor layer.

### Claim 8 (depends on 1)

The electronic device as claimed in claim 1, wherein the conductor is directly connected to the silicon semiconductor layer.

### Claim 9 (depends on 1)

The electronic device as claimed in claim 1, wherein the second transistor receives a signal.

### Claim 10 (depends on 1)

The electronic device as claimed in claim 1, wherein the first transistor comprises a bottom gate electrode, the second transistor comprises a top gate electrode, and the top gate electrode and the bottom gate electrode are located in a same layer.

### Claim 11 (depends on 1)

The electronic device as claimed in claim 1, further comprising a gate driving circuit outputting a signal and a driving circuit receiving the signal, and the driving circuit comprises the first transistor and the second transistor.

### Claim 12 (depends on 11)

The electronic device as claimed in claim 11, wherein the second transistor receives the signal.

### Claim 13 (depends on 11)

The electronic device as claimed in claim 11, wherein the first transistor is connected to a diode.