Manipulation zone for qubits in quantum dots

A method, comprising:

• providing an electronic component which is formed by a semiconductor component having gate electrode assemblies for manipulating a quantum state of qubits in quantum dots, including a substrate with a two-dimensional electron gas or electron hole gas;
• electrical contacts for connecting the gate electrode assemblies to voltage sources;
• a first gate electrode assembly having gate electrodes, which is arranged on a surface of the electronic component, for producing a potential wells in the substrate;
• a second gate electrode assembly for generating a potential barrier, which is adjacent to the first gate electrode assembly;
• parallel electrode fingers being part of the gate electrode assemblies, the electrode fingers of the first gate electrode assembly being periodically and alternately interconnected, which effects an almost continuous movement of the potential wells through the substrate;
• and
• a manipulator that sets the qubit to a definable quantum state in a manipulation zone,
• wherein the manipulation zone is provided in an adjacent region, which is formed by the first and second gate electrode assembly;
• and
• moving the quantum dot or the quantum dots into and out of the manipulation zone by the first or third gate electrode assembly, respectively.

A method, comprising:

• providing an electronic component which is formed by a semiconductor component having gate electrode assemblies for manipulating a quantum state of qubits in quantum dots, including
• a substrate with a two-dimensional electron gas or electron hole gas;
• electrical contacts for connecting the gate electrode assemblies to voltage sources:
• a first gate electrode assembly having gate electrodes, which is arranged on a surface of the electronic component, for producing a potential wells in the substrate;
• a second gate electrode assembly for generating a potential barrier, which is adjacent to the first gate electrode assembly;
• parallel electrode fingers being part of the gate electrode assemblies, the electrode fingers of the first gate electrode assembly being periodically and alternately interconnected, which effects an almost continuous movement of the potential wells through the substrate;
• and
• a manipulator that sets the qubit to a definable quantum state in a manipulation zone,
• wherein the manipulation zone is provided in an adjacent region, which is formed by the first and second gate electrode assembly, and
• wherein the respectively interconnected gate electrodes are configured such that a periodic and/or phase-shifted voltage can be applied to them;
• and
• moving the quantum dot or the quantum dots into the manipulation zone for an exchange interaction.

A method, comprising:

• providing an electronic component which is formed by a semiconductor component having gate electrode assemblies for manipulating a quantum state of qubits in quantum dots, including
• a substrate with a two-dimensional electron gas or electron hole gas;
• electrical contacts for connecting the gate electrode assemblies to voltage sources;
• a first gate electrode assembly having gate electrodes, which is arranged on a surface of the electronic component, for producing a potential wells in the substrate;
• a second gate electrode assembly for generating a potential barrier, which is adjacent to the first gate electrode assembly;
• parallel electrode fingers being part of the gate electrode assemblies, the electrode fingers of the first gate electrode assembly being periodically and alternately interconnected, which effects an almost continuous movement of the potential wells through the substrate;
• and
• a manipulator that sets the qubit to a definable quantum state in a manipulation zone,
• wherein the manipulation zone is provided in an adjacent region, which is formed by the first and second gate electrode assembly, and
• wherein the respectively interconnected gate electrodes are configured such that a periodic and/or phase-shifted voltage can be applied to them;
• moving the quantum dot within a magnetic gradient field back and forth to manipulate a qubit in the manipulation zone.