Resist compositions and semiconductor fabrication methods using the same

An extreme ultraviolet (EUV) resist composition comprising a hypervalent iodine compound of Chemical Formula 1,

• wherein:
• R1 is hydrogen, —C(O)CH3, —C(O)CF3, or R9SO2-,
• R2 is —C(O)CF3, —C(O)CH3, or R11SO2-,
• R3, R4, R5, R6, and R7 are each independently a hydrogen, a halogen, a halogen-substituted C1 or C2 alkyl group, or a halogen-substituted C6 to C20 aryl group, and
• R8, R9, R10, and R11 are each independently a substituted or unsubstituted C1 or C2 alkyl group or a substituted or unsubstituted C6 to C20 aryl group
• wherein the resist composition further comprises:
• a quencher;
• and
• a polymer comprising a compound of Chemical Formula 2A or 2B:
• wherein R20, R21, and R22 are each independently hydrogen or a substituted or unsubstituted C1 to C15 alkyl group, and m is an integer between 10 and 1,000,000, or
• wherein m is an integer between 10 and 1,000, and n is an integer between 10 to 1,000, wherein the resist composition forms a layer when exposed to EUV light at a wavelength of about 10 nm to about 124 nm.