Extreme ultraviolet mask and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Tsung Shih, Tsung-Chih Chien, Shih-Chi Fu, Chi-Hua Fu, Kuotang Cheng, Bo-Tsun Liu, Tsung Chuan Lee
Life of this patent
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Abstract
An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.
Claims20
An extreme ultraviolet (EUV) mask comprising:
- an absorber layer over a multilayer reflective layer;
- and
- a circuit pattern area and a particle attractive area over the multilayer reflective layer,
- wherein the particle attractive area includes conductive patterns having a dimension less than a resolution limit of an EUV exposure apparatus.
An extreme ultraviolet (EUV) mask comprising:
- an absorber layer over a multilayer reflective layer;
- a circuit pattern area and a particle attractive area over the multilayer reflective layer;
- and
- a conductive layer having a conductivity higher than the absorber layer and formed as a topmost area in the particle attractive area.
An extreme ultraviolet (EUV) mask, working with an EUV radiation and an EUV exposure apparatus, the EUV mask comprising:
- an absorber layer over a multilayer reflective layer;
- and
- a circuit pattern area and a particle attractive area over the multilayer reflective layer;
- and
- a conductive pattern formed as a topmost area in the particle attractive area, wherein the conductive pattern has a pitch less than λ/(2*NA), where λ is a wavelength of the EUV radiation, and NA is a numerical aperture of the EUV exposure apparatus.
Dependencies are inferred from the claim text.