# US 12,181,759 B2 · Display device

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- Number: US 12,181,759 B2
- Document ID: US12181759B2
- Status: Granted
- Kind: B2
- Application number: 18/457,350
- Filed: 2023-08-29
- Published: 2024-02-29
- Granted: 2024-12-31
- Earliest claimed: 2022-08-30
- Assignees: Japan Display Inc.
- Applicants: Japan Display Inc.
- Inventors: Akihiro Hanada; Hitoshi Tanaka
- Web page: https://patentgrep.com/patent/US12181759B2

## CPC

- G02F 1/136222: {Colour filters incorporated in the active matrix substrate}
- G02F 1/136286: {Wiring, e.g. gate line, drain line}
- G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)}
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

According to one embodiment, a display device includes a transparent semiconductor, a first insulating layer, a gate electrode, a second insulating layer, a source electrode, a third insulating layer, a transparent electrode which is in contact with the semiconductor in a second contact hole penetrating the first insulating layer, the second insulating layer and the third insulating layer, a fourth insulating layer, a color filter, and a pixel electrode electrically connected to the transparent electrode. The first insulating layer and the second insulating layer are silicon oxide layers. At least one of the third insulating layer and the fourth insulating layer is a silicon nitride layer.

## Claims

### Claim 1

A display device comprising:
a substrate;
a transparent semiconductor provided above the substrate;
a first insulating layer which covers the semiconductor;
a gate electrode which is provided on the first insulating layer and intersects with the semiconductor;
a second insulating layer which covers the gate electrode;
a source electrode which is provided on the second insulating layer and is in contact with the semiconductor in a first contact hole penetrating the first insulating layer and the second insulating layer;
a third insulating layer which covers the source electrode;
a transparent electrode which is provided on the third insulating layer and is in contact with the semiconductor in a second contact hole penetrating the first insulating layer, the second insulating layer and the third insulating layer;
a fourth insulating layer which covers the transparent electrode;
a color filter provided on the fourth insulating layer;
a pixel electrode which is provided above the color filter, faces the color filter and is electrically connected to the transparent electrode; and
a common electrode which faces the pixel electrode, wherein
the fourth insulating layer comprises a third contact hole for connecting the transparent electrode to the pixel electrode,
the third contact hole overlaps the semiconductor in plan view,
the first insulating layer and the second insulating layer are silicon oxide layers,
at least one of the third insulating layer and the fourth insulating layer is a silicon nitride layer, and
in plan view, the third contact hole overlaps an intersection where the semiconductor and the gate electrode intersect with each other.

### Claim 2 (depends on 1)

The display device of claim 1, wherein
the third insulating layer is a silicon nitride layer and is retracted such that an upper surface of the second insulating layer is partly exposed in the second contact hole.

### Claim 3 (depends on 1)

The display device of claim 1, wherein
the third insulating layer is a silicon nitride layer and is formed such that an upper surface of the second insulating layer is not exposed in the second contact hole.

### Claim 4 (depends on 1)

The display device of claim 1, further comprising a plurality of scanning lines and a plurality of signal lines, wherein
the scanning lines intersect with the signal lines,
one of the scanning lines includes the gate electrode,
one of the signal lines includes the source electrode,
the semiconductor and the transparent electrode extend to an aperture surrounded by the adjacent scanning lines and the adjacent signal lines in plan view, and
the second contact hole is located in the aperture and overlaps the color filter.

### Claim 5 (depends on 1)

The display device of claim 1, wherein
the third contact hole does not overlap the color filter in plan view.

### Claim 6 (depends on 4)

The display device of claim 4, further comprising:
a first substrate comprising the semiconductor, the scanning lines, the signal lines, the transparent electrode, the color filter, the pixel electrode and the common electrode;
a second substrate which faces the first substrate; and
a liquid crystal layer between the first substrate and the second substrate.

### Claim 7

A display device comprising:
a substrate;
a transparent semiconductor provided above the substrate;
a first insulating layer which covers the semiconductor;
a gate electrode which is provided on the first insulating layer and intersects with the semiconductor;
a second insulating layer which covers the gate electrode;
a source electrode which is provided on the second insulating layer and is in contact with the semiconductor in a first contact hole penetrating the first insulating layer and the second insulating layer;
a third insulating layer which covers the source electrode;
a transparent electrode which is provided on the third insulating layer and is in contact with the semiconductor in a second contact hole penetrating the first insulating layer, the second insulating layer and the third insulating layer;
a fourth insulating layer which covers the transparent electrode;
a color filter provided on the fourth insulating layer:
a pixel electrode which is provided above the color filter, faces the color filter and is electrically connected to the transparent electrode; and
a common electrode which faces the pixel electrode, wherein
the fourth insulating layer comprises a third contact hole for connecting the transparent electrode to the pixel electrode,
the third contact hole overlaps the semiconductor in plan view,
the first insulating layer and the second insulating layer are silicon oxide layers,
at least one of the third insulating layer and the fourth insulating layer is a silicon nitride layer, and
the third contact hole is located between the first contact hole and the second contact hole on the semiconductor.

### Claim 8 (depends on 4)

The display device of claim 4, wherein
the first contact hole and the second contact hole do not overlap any of the scanning lines.

### Claim 9 (depends on 1)

The display device of claim 1, further comprising a first scanning line, a second scanning line and a plurality of signal lines, wherein
the first scanning line and the second scanning line intersect with the signal lines,
the first scanning line and the second scanning line are electrically connected to each other,
the second scanning line overlaps the first scanning line, and
the third contact hole overlaps the first scanning line and the second scanning line.

### Claim 10 (depends on 9)

The display device of claim 9, wherein
both the first contact hole and the second contact hole do not overlap either the first scanning line or the second scanning line.

### Claim 11 (depends on 1)

The display device of claim 1, further comprising a filling material and an alignment film, wherein
a recess generated by the third contact hole is filled with the filling material, and
the filling material is formed of an organic insulating material different from that of the alignment film.

### Claim 12 (depends on 1)

The display device of claim 1, further comprising an organic insulating layer, wherein
the organic insulating layer covers the color filter, and
the pixel electrode is in contact with the organic insulating layer, and is not contact with the color filter.

### Claim 13 (depends on 1)

The display device of claim 1, wherein
the semiconductor comprises a recess portion overlapping the second contact hole, and
the transparent electrode is in contact with the recess portion.
