# US 12,181,629 B2 · Optical device and method of forming the same

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- Number: US 12,181,629 B2
- Document ID: US12181629B2
- Status: Granted
- Kind: B2
- Application number: 17/625,065
- Filed: 2020-06-24
- Published: 2022-09-08
- Granted: 2024-12-31
- Earliest claimed: 2019-07-19
- Assignees: Agency for Science, Technology and Research
- Applicants: Agency for Science, Technology and Research
- Inventors: Zeng Wang; Jinghua Teng; Shijie Wang; Ming Yang
- Web page: https://patentgrep.com/patent/US12181629B2

## CPC

- G02B 1/002: {made of materials engineered to provide properties not available in nature, e.g. metamaterials}
- G02B 5/1857: {using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams}
- G02B 5/1876: {Diffractive Fresnel lenses; Zone plates; Kinoforms (G02B5/1842, G02B5/1847 take precedence; optical systems having diffractive correction means G02B27/0037; Fresnel lenses operating by refraction G02B3/08)}
- G02B 27/58: Optics for apodization or superresolution; Optical synthetic aperture systems
- G03H 1/024: {Hologram nature or properties}
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- C01B 19/007: {Tellurides or selenides of metals (C01B19/002 takes precedence)}
- C01G 39/06: Sulfides
- G02B 2207/101: Nanooptics
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G03H: HOLOGRAPHIC PROCESSES OR APPARATUS (holograms, e.g. point holograms, used as ordinary optical elements G02B5/32; producing stereoscopic or other three-dimensional effects G02B30/00; diffraction-grating systems G02B27/44; systems using moiré fringes G02B27/60; optical logic elements G02F3/00; stereo-photography G03B35/00; photosensitive materials or processes for photographic purposes G03C; {stereo-photographic or similar processes G03C9/00}; apparatus for processing exposed photographic materials G03D; analogue computers performing mathematical operations with the aid of optical elements G06E3/00; authentication by radiation, of concealed information carried by holograms or diffraction gratings G06K19/16; holographic storage G11B7/0065, G11C13/04; {stereoscopic or other three dimensional effects in television systems H04N13/00})
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C01G: COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts or peroxyacids C01B15/00; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium, or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds containing nitrogen, other non-metals and metal C01B21/082}; metal amides C01B21/092; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanamide C01C3/16; thiocyanates C01C3/20)

## Abstract

Various embodiments may relate to an optical device. The optical device may include a stacked structure having a first surface and a second surface opposite the first surface. The stacked structure may include a plurality of holes or grooves extending from the first surface towards the second surface. The stacked structure may include a transition metal dichalcogenide material (TMDC) material. A thickness of the stacked structure may be of any value less than 100 nm.

## Claims

### Claim 1

An optical device comprising:
a stacked structure having a first surface and a second surface opposite the first surface;
wherein the stacked structure comprises a plurality of holes or grooves extending from the first surface towards the second surface;
wherein the stacked structure comprises a transition metal dichalcogenide (TMDC) material; and
wherein a thickness of the stacked structure is of any value less than 100 nm;
wherein the optical device is a super oscillatory lens (SOL), a super-critical lens (SCL), or a Fresnel zone plate configured to generate a sub-diffraction limit focusing spot, or a photon sieve configured to generate a hologram, upon light incident onto the optical device; and
wherein the light is any one selected from a group consisting of visible light, ultraviolet (UV) light and infrared (IR) light.

### Claim 2 (depends on 1)

The optical device according to claim 1, wherein the thickness of the stacked structure is of any value equal to or less than 10 nm.

### Claim 3 (depends on 1)

The optical device according to claim 1, wherein the stacked structure comprises a plurality of layers of the transition metal dichalcogenide (TMDC) material.

### Claim 4 (depends on 1)

The optical device according to claim 1, wherein the transition metal dichalcogenide (TMDC) material is molybdenum disulfide (MoS2).

### Claim 5 (depends on 1)

The optical device according to claim 1, wherein the plurality of grooves of the super oscillatory lens (SOL), the super-critical lens (SCL), or the Fresnel zone plate forms a plurality of concentric ring structures.

### Claim 6 (depends on 5)

The optical device according to claim 5, wherein the optical device is configured to generate the sub-diffraction limit focusing spot upon the light incident onto the optical device such that the sub-diffraction limit focusing spot is of a full width at half maximum (FWHM) equal to or less than 0.515 times of a wavelength of the light divided by a numerical aperture of the optical device.

### Claim 7 (depends on 1)

The optical device according to claim 1, wherein the plurality of holes of the photon sieve extends from the first surface of the stacked structure to the second surface of the stacked structure.

### Claim 8 (depends on 7)

The optical device according to claim 7, wherein a total efficiency when the light is incident onto the photon sieve at an angle 30° is at a value more than 75% of a total efficiency when the light is incident onto the photon sieve along the normal.

### Claim 9

A method of forming an optical device, the method comprising:
forming a plurality of holes or grooves extending from a first surface of a stacked structure towards a second surface of the stacked structure opposite the first surface;
wherein the stacked structure comprises a transition metal dichalcogenide (TMDC) material; and
wherein a thickness of the stacked structure is of any value less than 100 nm;
wherein the optical device is a super oscillatory lens (SOL), a super-critical lens (SCL), or a Fresnel zone plate configured to generate a sub-diffraction limit focusing spot, or a photon sieve configured to generate a hologram, upon light incident onto the optical device; and
wherein the light is any one selected from a group consisting of visible light, ultraviolet (UV) light and infrared (IR) light.

### Claim 10 (depends on 9)

The method according to claim 9, wherein the thickness of the stacked structure is of any value equal to or less than 10 nm.

### Claim 11 (depends on 9)

The method according to claim 9, further comprising:
forming the stacked structure on a substrate via physical vapor deposition or chemical vapor deposition before forming the plurality of holes or grooves.

### Claim 12 (depends on 11)

The method according to claim 11, further comprising:
depositing a mask layer on the stacked structure after forming the stacked structure and before forming the plurality of holes or grooves.

### Claim 13 (depends on 12)

The method according to claim 12, wherein the mask layer comprises a metal, a polymer or a dielectric material.

### Claim 14 (depends on 13)

The method according to claim 13, wherein the metal is gold or chromium.

### Claim 15 (depends on 13)

The method according to claim 13, wherein the polymer is poly(methyl methacrylate) or photoresist.

### Claim 16 (depends on 13)

The method according to claim 13, wherein the dielectric material is silicon oxide (SiO2) or aluminum oxide (Al2O3).

### Claim 17 (depends on 12)

The method according to claim 12, wherein the plurality of holes or grooves are formed by etching through the mask layer.

### Claim 18 (depends on 17)

The method according to claim 17, wherein the etching is focused ion beam (FIB) etching, plasma etching, or reactive ion etching.

### Claim 19 (depends on 17)

The method according to claim 17, further comprising:
removing the mask layer from the stacked structure after forming the plurality of holes or grooves on the stacked structure.