Inspection method
AssigneeHitachi High-Tech Corporation
InventorsShota Mitsugi, Yohei Nakamura, Daisuke Bizen, Junichi Fuse, Satoshi Takada, Natsuki Tsuno
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Abstract
A control device controls a contact probe in synchronization with a pulse-controlled light having a predetermined wavelength, a measurement instrument measures a characteristic of a sample to be inspected or an analysis sample, and a circuit constant or a defect structure of the sample to be inspected is estimated based on a circuit model created by an electric characteristic analysis device configured to generate the circuit model based on a value measured by the measurement instrument and a detection signal of secondary electrons detected by the charged particle beam device.
Claims12
An inspection method using a charged particle beam device that observes a microstructure of a sample, which is an observation target,
- the charged particle beam device including
- a charged particle optical system including a charged particle source configured to emit a charged particle beam, and a detector configured to detect secondary electrons generated by irradiating the sample with the charged particle beam,
- a light irradiation system including a light source configured to irradiate the sample with light having a predetermined wavelength, and a gate configured to pulse-control the light having a predetermined wavelength,
- a probe configured to apply a voltage or a current to the sample irradiated with the light having a predetermined wavelength pulse-controlled by the gate,
- a measurement instrument configured to measure a characteristic of the sample by the applied voltage or the applied current, and
- a movable stage on which the sample is placed,
- the inspection method comprising:
- measuring the characteristic of the sample using output of the measurement instrument while controlling the probe in synchronization with the pulse-controlled light having a predetermined wavelength;
- generating a circuit model based on the characteristic of the sample;
- and
- estimating a circuit constant or a defect structure of the sample based on the circuit model and a detection signal relevant to the secondary electrons output by the detector.
A device comprising:
- a charged particle beam device;
- and
- a computer,
- wherein the charged particle beam device comprises:
- a charged particle optical system including a charged particle source configured to emit a charged particle beam, and a detector configured to detect secondary electrons generated by irradiating a sample, which is an observation target, with the charged particle beam,
- a light irradiation system including a light source configured to irradiate the sample with light having a predetermined wavelength, and a gate configured to pulse-control the light having a predetermined wavelength,
- a probe configured to apply a voltage or a current to the sample irradiated with the light having a predetermined wavelength pulse-controlled by the gate,
- a measurement instrument configured to measure a characteristic of the sample by the applied voltage or the applied current, and
- a movable stage on which the sample is placed, and
- wherein the computer:
- measures the characteristic of the sample using output of the measurement instrument while controlling the probe in synchronization with the pulse-controlled light having a predetermined wavelength,
- generates a circuit model based on the characteristic of the sample, and
- estimates a circuit constant or a defect structure of the sample based on the circuit model and a detection signal relevant to the secondary electrons output by the detector.
Dependencies are inferred from the claim text.