# US 12,181,499 B2 · Detector for detecting the polarity of an alternating signal

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- Number: US 12,181,499 B2
- Document ID: US12181499B2
- Status: Granted
- Kind: B2
- Application number: 18/042,122
- Filed: 2021-09-01
- Published: 2023-10-05
- Granted: 2024-12-31
- Earliest claimed: 2020-09-07
- Assignees: Commissariat A L'energie Atomique Et Aux Energies Alternatives
- Applicants: Commissariat A L'energie Atomique Et Aux Energies Alternatives
- Inventors: Dominique Bergogne; Frédéric Rothan
- Web page: https://patentgrep.com/patent/US12181499B2

## CPC

- G01R 19/14: Indicating direction of current; Indicating polarity of voltage
- G01R 19/16519: {using FET's}
- H03K 5/24: the characteristic being amplitude
- H03K 17/0822: {in field-effect transistor switches}
- H10D 89/60: Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- G01R 19/0092: {Measuring current only}
- G01R 31/2621: {for testing field effect transistors, i.e. FET's}
- G01R 31/275: {for testing individual semiconductor components within integrated circuits}
- H03K 2217/0027: Measuring means of, e.g. currents through or voltages across the switch
- G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12)
- H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A device for detecting the polarity of a current or voltage, the detection device including a circuit portion with a detection node configured to produce at the detection node a measurement voltage which is an image of a fraction of the detected current or voltage, and a detection circuit with transistor(s), coupled to the detection node, and provided with amplifier(s), with a comparator transistor having a source gate voltage which depends on the measurement voltage. The comparator transistor further includes a source set at a first fixed potential and a source-gate voltage which depends on the measurement voltage or a gate set at a second fixed potential and a source-gate voltage which depends on the measurement voltage, the detection circuit being configured to compare the measurement potential with a threshold and to output a binary detection signal indicating the polarity of the detected current or voltage.

## Claims

### Claim 1

A device for detecting the polarity of an alternately positive and negative detected current or of an alternately positive or negative detected voltage, the detection device being configured to indicate the polarity of the detected current or of the detected voltage, the detection device comprising:
a circuit portion provided with a detection node configured to produce at the detection node a measurement voltage image of a fraction of the detected current or of the detected voltage, and
at least one detection circuit with transistor(s), coupled to the detection node, the at least one detection circuit being provided with one or more amplifier stage(s), at least one of the amplifier stages comprising a comparator transistor having a gate-source voltage which depends on the measurement voltage,
the comparator transistor further having a source set at a fixed potential and a gate-source voltage which depends on the measurement voltage or a gate set at a fixed potential and a gate-source voltage which depends on the measurement voltage,
the at least one detection circuit further comprising an output transistor having a drain coupled to an output, the output transistor having a gate coupled to the drain of the comparator transistor, and
the at least one detection circuit being configured to compare the measurement voltage with a determined threshold, and produce at the output a binary detection signal indicative of the polarity of the detected current or of the detected voltage, the detection adopting a first state when the measurement voltage is below the determined threshold and adopting a second state when the measurement voltage is above the determined threshold,
wherein the detection node is coupled to a source of an input transistor of the detection circuit or to the source of the comparator transistor, and
wherein the input transistor, the comparator transistor, and the output transistor of the detection circuit are of the N type and normally blocked.

### Claim 2 (depends on 1)

The detection device according to claim 1, wherein the at least one detection circuit produces on the output a detection signal indicative of a positive polarity, the amplifier stages forming a positive-gain amplification chain, the detection node being coupled to the source of the input transistor of the detection circuit, the input transistor being provided with a drain electrode coupled to the gate of the comparator transistor, and the comparator transistor having a source set at a fixed potential.

### Claim 3 (depends on 2)

The detection device according to claim 2, comprising the input transistor being mounted as a diode.

### Claim 4 (depends on 1)

The detection device according to claim 1, wherein the detection node is coupled to the source of the comparator transistor and wherein the at least one detection circuit produces at the output a detection signal indicative of a detection of a negative polarity, the amplifier stages(s) forming a negative-gain amplification chain.

### Claim 5 (depends on 4)

The detection device according to claim 4, wherein the gate of the comparator transistor is coupled to a transistor mounted as a diode.

### Claim 6 (depends on 5)

The detection device according to claim 5, wherein the detection node is coupled to the gate of the input transistor of the at least one detection circuit, the input transistor having a drain coupled to the gate of the comparator transistor.

### Claim 7 (depends on 1)

The detection device according to claim 1, wherein the detection node is coupled to a source electrode of the input transistor of the at least one detection circuit, the input transistor being provided with a drain electrode coupled to the gate of the comparator transistor and to a transistor forming an active load.

### Claim 8 (depends on 1)

The detection device according to claim 1, wherein the at least one detection circuit produces a detection signal indicative of a positive polarity, the device being provided with at least one second detection circuit, the at least one second detection circuit having transistor(s) being provided with at least one amplification stage comprising at least one comparator transistor whose gate-source voltage depends on the measurement voltage, the at least one second detection circuit being configured to compare the measurement voltage with a predetermined second threshold and produce at the output another detection signal, and the other detection signal being a two-state signal able to indicate a negative polarity.

### Claim 9 (depends on 8)

The detection device according to claim 8, wherein the at least one detection circuit and the at least one second detection circuit are configured with a dead zone detection range corresponding to current values around a zero value, which are not detected.

### Claim 10 (depends on 1)

The detection device according to claim 1, further comprising a circuit for biasing the transistors of the at least one detection circuit, the biasing circuit being supplied by a positive power supply voltage.

### Claim 11 (depends on 1)

The detection device according to claim 1, wherein the alternating current is derived from a power transistor coupled to the circuit portion, the power transistor being a HEMT transistor provided with a GaN-based channel, the transistor(s) of the at least one detection circuit also being HEMT transistors provided with a channel structure formed in a GaN layer.

### Claim 12 (depends on 1)

The detection device according to claim 1, wherein
the detected alternating current is derived from a power transistor coupled to the circuit portion, the device further comprising the power transistor, and
the power transistor, the circuit portion, and the at least one detection circuit being integrated on a same substrate.

### Claim 13 (depends on 1)

The detection device according to claim 1, wherein the at least one detection circuit consists of N-type transistors and biasing loads consisting of resistors and/or transistors.