Method of fabricating hexagonal boron nitride
AssigneesSamsung Electronics Co., Ltd., Unist (Ulsan National Institute of Science and Technology)
InventorsChangseok Lee, Hyeonsuk Shin, Hyeonjin Shin, Seokmo Hong, Kyungyeol Ma
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Abstract
Disclosed herein is a method of fabricating hexagonal boron nitride in which hexagonal boron nitride is epitaxially grown. A method of fabricating hexagonal boron nitride includes placing a catalytic metal in a chamber, the catalytic metal having a hexagonal crystal structure and having a lattice mismatch of 15% or less with hexagonal boron nitride (h-BN) in a chamber; and growing hexagonal boron nitride on the catalytic metal at a temperature of 800° C. or lower while supplying a nitrogen source and a boron source into the chamber.
Claims18
A method of fabricating hexagonal boron nitride, the method comprising:
- placing a catalytic metal in a chamber, the catalytic metal having a hexagonal crystal structure and having a lattice mismatch of greater than or equal to 0% and less than or equal to 15% with hexagonal boron nitride (h-BN);
- removing pollutants from a surface of the catalytic metal;
- and
- growing hexagonal boron nitride on the catalytic metal at a temperature of 600° C. to 800° C. while supplying a nitrogen source and a boron source into the chamber,
- wherein
- the hexagonal boron nitride is grown directly on the catalytic metal, and
- the catalytic metal includes crystals osmium (Os),
- wherein the removing the pollutants from the surface of the catalytic metal includes supplying hydrogen (H2) gas into the chamber and increasing a temperature in the chamber to 1,000° C.,
- wherein the removing the pollutants from the surface of the catalytic metal is performed for 20 minutes while supplying the hydrogen gas at a flow rate of 100 sccm, and
- wherein the growing the hexagonal boron nitride provides a grown hexagonal boron nitride with a Raman spectrum having a peak at about 1370 cm−1 and a peak at about 1450 cm−1, and an intensity of the peak at about 1370 cm−1 is greater than an intensity of the peak at about 1450 cm−1.
A method of fabricating hexagonal boron nitride, the method comprising:
- placing a catalytic metal in a chamber, the catalytic metal having a hexagonal crystal structure and including crystals of osmium (Os);
- and
- directly growing hexagonal boron nitride on the catalytic metal at a temperature in a range of about 600° C. to about 800° C. while supplying a nitrogen source and a boron source into the chamber,
- wherein the directly growing the hexagonal boron nitride provides a grown hexagonal boron nitride with a Raman spectrum having a peak at about 1370 cm−1 and a peak at about 1450 cm−1, and an intensity of the peak at about 1370 cm−1 is greater than an intensity of the peak at about 1450 cm−1.
Dependencies are inferred from the claim text.