# US 12,180,578 B2 · RF sputtering apparatus for controlling atomic layer of thin film

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- Number: US 12,180,578 B2
- Document ID: US12180578B2
- Status: Granted
- Kind: B2
- Application number: 18/031,071
- Filed: 2021-08-31
- Published: 2023-11-23
- Granted: 2024-12-31
- Earliest claimed: 2020-10-14
- Assignees: Pusan National University Industry-University Cooperation Foundation
- Applicants: Pusan National University Industry—University Cooperation Foundation
- Inventors: Se Young Jeong; You Sil Lee; Su Jae Kim; Sang Eon Park; Mi Yeon Cheon
- Web page: https://patentgrep.com/patent/US12180578B2

## CPC

- C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy}
- C30B 29/02: Elements
- C23C 14/0036: {Reactive sputtering}
- C23C 14/34: Sputtering
- C23C 14/3407: {Cathode assembly for sputtering apparatus, e.g. Target}
- C23C 14/35: by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)}
- C23C 14/56: Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C30B 23/02: Epitaxial-layer growth
- H01J 37/32082: {Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence)}
- H01J 37/32798: {Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus}
- H01J 37/34: operating with cathodic sputtering (H01J37/36 takes precedence {; methods of cathodic sputtering C23C14/34})
- H01J 37/3411: {Constructional aspects of the reactor}
- H01J 37/3488: {Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus}
- H01B 1/026: {Alloys based on copper}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})

## Abstract

There is provided an RF sputtering apparatus for controlling an atomic layer of a thin film. The RF sputtering apparatus includes: a sputtering main body including a substrate, a target facing the substrate, and a chamber for performing a sputtering process to deposit the target on the substrate; a power supply unit connected to the target of the sputtering main body via a network to apply RF power; a roughing pump unit for forming vacuum inside the chamber of the sputtering main body; and a gas supply unit for supplying reaction gas to the inside of the chamber. A power cable for supplying a power source to the power supply unit is formed with a single crystal copper wire.

## Claims

### Claim 1

An RF sputtering apparatus for controlling an atomic layer of a thin film, comprising:
a sputtering main body including a substrate, a target facing the substrate, and a chamber for performing a sputtering process to deposit the target on the substrate;
a power supply unit connected to the target of the sputtering main body via a network to apply RF power;
a roughing pump unit for forming vacuum inside the chamber of the sputtering main body; and
a gas supply unit for supplying reaction gas to the inside of the chamber,
wherein a power cable for supplying a power source to the power supply unit is formed with a single crystal copper wire,
wherein the network for transferring the RF power of the power supply unit to the sputtering main body is formed with a single crystal copper wire, and
wherein an outdoor grounding part grounded on the power supply unit is formed with a single crystal copper bulk.

### Claim 2 (depends on 1)

The RF sputtering apparatus according to claim 1, wherein the target of the sputtering main body is formed into a single crystal target by cutting a single crystal metal of a cylindrical shape grown by the Czochralski method or the Bridgman method.

### Claim 3 (depends on 1)

The RF sputtering apparatus according to claim 1, wherein the single crystal copper bulk is obtained by cutting the cylindrical single crystal copper grown by the Czochralski method or the Bridgman method.

### Claim 4 (depends on 1)

The RF sputtering apparatus according to claim 1, wherein each edge of bottom surfaces of the sputtering main body and the roughing pump unit is supported by a vibration blocking unit to prevent vibration from a floor being transferred thereto, and
wherein the vibration blocking unit comprises:
a spike attached to the bottom surfaces to support the sputtering main body and the roughing pump unit, and having a horned shape which is gradually sharper toward the floor; and
a shoe seated on the floor and having an insertion groove formed on an upper surface for accommodating a peak of the spike to fix only a planar position of the spike.

### Claim 5 (depends on 4)

The RF sputtering apparatus according to claim 4, wherein the roughing pump unit is physically separated from the sputtering main body, and is connected to the chamber via a connection hose made of a rubber material, and
wherein a center of the connection hose is fixed on a wall surface connected to the floor.