# US 12,180,577 B2 · Titanium sputtering target, production method therefor, and method for producing titanium-containing thin film > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,180,577 B2 - Document ID: US12180577B2 - Status: Granted - Kind: B2 - Application number: 17/666,703 - Filed: 2022-02-08 - Published: 2022-05-26 - Granted: 2024-12-31 - Earliest claimed: 2017-09-21 - Assignees: JX Advanced Metals Corporation - Applicants: JX Nippon Mining & Metals Corporation - Inventors: Shuhei Murata; Daiki Shono - Web page: https://patentgrep.com/patent/US12180577B2 ## CPC - C22F 1/183: {of titanium or alloys based thereon} - C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy} - C22C 14/00: Alloys based on titanium - H01J 37/3426: {Material} - C22F: CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS (surface treatment of metallic material involving at least one process provided for in class C23 and at least one process covered by this subclass, C23F17/00) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - C22C: ALLOYS (treatment of alloys C21D, C22F) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract Provided is a titanium sputtering target having a recrystallized structure having an average crystal grain diameter of 1 μm or less. Also provided is a method for producing a titanium sputtering target, the method comprising the steps of: subjecting a cut titanium ingot to large strain processing to provide a processed sheet; subjecting the processed sheet to cold rolling at a rolling ratio of 30% or more to provide a rolled sheet; and subjecting the rolled sheet to a heat treatment at a temperature of 320° C. or less. ## Claims ### Claim 1 A method for producing a titanium sputtering target, the method comprising the steps of: subjecting a cut titanium ingot having a purity of 4N (99.99% by mass) or more to strain processing to provide a processed sheet having a total strain amount of 2 or more; subjecting the processed sheet to cold rolling at a rolling ratio of 30% or more to provide a rolled sheet; and subjecting the rolled sheet to a heat treatment at a temperature of 320° C. or less, wherein the titanium sputtering target produced has an average crystal grain diameter of 1 μm or less. ### Claim 2 (depends on 1) The method for producing the titanium sputtering target according to claim 1, wherein a processing temperature in the strain processing is 500° C. or less. ### Claim 3 (depends on 1) The method for producing the titanium sputtering target according to claim 1, wherein the strain processing is multidirectional forging. ### Claim 4 (depends on 1) The method for producing the titanium sputtering target according to claim 1, wherein a rolling ratio in the cold rolling is more than 70%. ### Claim 5 (depends on 1) The method for producing the titanium sputtering target according to claim 1, wherein a total strain amount of the processed sheet is more than 3. ### Claim 6 (depends on 1) The titanium sputtering target produced using the method according to claim 1. ### Claim 7 (depends on 6) A method for producing a titanium-containing thin film, the method comprising using the titanium sputtering target according to claim 6 as a sputtering source. ### Claim 8 (depends on 2) The method for producing the titanium sputtering target according to claim 2, wherein the strain processing is multidirectional forging. ### Claim 9 (depends on 2) The method for producing the titanium sputtering target according to claim 2, wherein a rolling ratio in the cold rolling is more than 70%. ### Claim 10 (depends on 3) The method for producing the titanium sputtering target according to claim 3, wherein a rolling ratio in the cold rolling is more than 70%. ### Claim 11 (depends on 8) He method for producing the titanium sputtering target according to claim 8, wherein a rolling ratio in the cold rolling is more than 70%. ### Claim 12 (depends on 2) The method for producing the titanium sputtering target according to claim 2, wherein a total strain amount of the processed sheet is more than 3. ### Claim 13 (depends on 3) The method for producing the titanium sputtering target according to claim 3, wherein a total strain amount of the processed sheet is more than 3. ### Claim 14 (depends on 4) The method for producing the titanium sputtering target according to claim 4, wherein a total strain amount of the processed sheet is more than 3. ### Claim 15 (depends on 8) The method for producing the titanium sputtering target according to claim 8, wherein a total strain amount of the processed sheet is more than 3. ### Claim 16 (depends on 9) The method for producing the titanium sputtering target according to claim 9, wherein a total strain amount of the processed sheet is more than 3. ### Claim 17 (depends on 10) The method for producing the titanium sputtering target according to claim 10, wherein a total strain amount of the processed sheet is more than 3. ### Claim 18 (depends on 11) The method for producing the titanium sputtering target according to claim 11, wherein a total strain amount of the processed sheet is more than 3. ### Claim 19 (depends on 1) The method for producing the titanium sputtering target according to claim 1, wherein the average crystal grain diameter is 0.9 μm or less. ### Claim 20 (depends on 1) The method for producing the titanium sputtering target according to claim 1, wherein the average crystal grain diameter is from 0.1 μm to 0.8 μm.