# US 12,180,403 B2 · Quantum dot, method of manufacturing quantum dot, and electronic element

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- Number: US 12,180,403 B2
- Document ID: US12180403B2
- Status: Granted
- Kind: B2
- Application number: 17/572,928
- Filed: 2022-01-11
- Published: 2022-07-14
- Granted: 2024-12-31
- Earliest claimed: 2021-01-12
- Assignees: Duk San Neolux Co., Ltd.
- Applicants: Duk San Neolux Co., Ltd
- Inventors: Do Eon Kim; Jong Moon Shin; Chang Min Lee; Hyung Dong Lee
- Web page: https://patentgrep.com/patent/US12180403B2

## CPC

- C09K 11/71: also containing alkaline earth metals
- C09K 11/0883: {Arsenides; Nitrides; Phosphides}
- C09K 11/703: {with zinc or cadmium}
- H10K 50/115: comprising active inorganic nanostructures, e.g. luminescent quantum dots
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- B82Y 40/00: Manufacture or treatment of nanostructures
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

Provided are a quantum dot, a method of manufacturing the quantum dot, and an electronic device including the quantum dot. The quantum dot includes a core including a first semiconductor nanocrystal and a doping metal. The first semiconductor nanocrystal includes a group II element, a group III element, and a group V element. The quantum dot has a narrower full width at half maximum (FWHM) and superior quantum efficiency, and manufactured in a simple manner.

## Claims

### Claim 1

A quantum dot comprising:
a core comprising a first semiconductor nanocrystal and a doping metal, the doping metal being positioned inside of the core; and
a shell on the core comprising a second semiconductor nanocrystal,
wherein the first semiconductor nanocrystal comprises a group II element, a group III element, and a group V element,
the second semiconductor nanocrystal comprises a group II element and a group VI element,
the doping metal is a material different from the group II element, the group III element, and the group V element of the first semiconductor nanocrystal and is selected from Sr, Ba, and Ca, and
a ratio between the number of moles of the group III element of the first semiconductor nanocrystal and the number of moles of the doping metal ranges from 1:0.001 to 1:0.2.

### Claim 2 (depends on 1)

The quantum dot of claim 1, wherein the ratio between the number of moles of the group III element of the first semiconductor nanocrystal and the number of moles of the doping metal ranges from 1:0.01 to 1:0.2.

### Claim 3 (depends on 1)

The quantum dot of claim 1, wherein a ratio between the number of moles of the group III element in the first semiconductor nanocrystal and the number of moles of the group II element in the first semiconductor nanocrystal ranges from 1:5 to 1:10.

### Claim 4 (depends on 1)

The quantum dot of claim 1, wherein the first semiconductor nanocrystal comprises In, Zn, and P.

### Claim 5 (depends on 1)

The quantum dot of claim 1, wherein the doping metal comprises one or more selected from Sr and Ba.

### Claim 6 (depends on 1)

The quantum dot of claim 1, wherein a ratio between the number of moles of the group III element in the quantum dot and the number of moles of the group II element in the quantum dot ranges from 1:16 to 1:25.

### Claim 7

A method of manufacturing a quantum dot, the method comprising:
a step of forming a core comprising a first semiconductor nanocrystal and a doping metal, and
a step of forming a shell on the core,
wherein the first semiconductor nanocrystal comprises a group II element, a group III element, and a group V element,
the second semiconductor nanocrystal comprises a group II element and a group VI element,
the doping metal is a material different from the group II element, the group III element, and the group V element of the first semiconductor nanocrystal and is selected from Sr, Ba, Be, and Ca, and
a ratio between the number of moles of the group III element of the first semiconductor nanocrystal and the number of moles of the doping metal ranges from 1:0.001 to 1:0.2.

### Claim 8 (depends on 7)

The method of claim 7, wherein the step of forming a core comprises:
a step (1-1) of raising a temperature to a temperature range of from 100° C. to 200° C. while decompressing a mixture solution in which a doping metal precursor and a group II element precursor solution are added to a group III element precursor solution; and
a step (1-2) raising the temperature of the mixture solution, the temperature of which has been raised in the step (1-1), to a temperature range of from 200° C. to 400° C. in an inert atmosphere and adding a group V element precursor solution to the temperature-raised mixture solution.

### Claim 9 (depends on 8)

The method of claim 8, wherein the group II element precursor solution comprises a metal OXO cluster.

### Claim 10 (depends on 7)

The method of claim 7, further comprising a step of forming a plurality of the shells surrounding the core.

### Claim 11 (depends on 1)

An electronic device comprising the quantum dot of claim 1.