# US 12,180,368 B2 · Thermal-conductive silicone composition, production method therefor, and semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,180,368 B2 - Document ID: US12180368B2 - Status: Granted - Kind: B2 - Application number: 17/440,641 - Filed: 2020-02-10 - Published: 2022-05-26 - Granted: 2024-12-31 - Earliest claimed: 2019-04-01 - Assignees: Shin-Etsu Chemical Co., Ltd. - Applicants: Shin-Etsu Chemical Co., Ltd. - Inventors: Wataru Toya; Keita Kitazawa; Takahiro Yamaguchi - Web page: https://patentgrep.com/patent/US12180368B2 ## CPC - C08L 83/04: Polysiloxanes - C08J 3/20: Compounding polymers with additives, e.g. colouring - C08J 3/203: {Solid polymers with solid and/or liquid additives} - C08K 3/28: Nitrogen-containing compounds - C09K 5/14: Solid materials, e.g. powdery or granular - H10W 40/251: {Organics} - H10W 40/259: {Ceramics or glasses (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence)} - H10W 40/70: Fillings or auxiliary members in containers or in encapsulations for thermal protection or control - C08G 77/04: Polysiloxanes - C08G 77/16: to hydroxy groups - C08K 2003/282: {Binary compounds of nitrogen with aluminium} - C08K 2201/001: Conductive additives - C08K 2201/005: Additives being defined by their particle size in general - C08L: COMPOSITIONS OF MACROMOLECULAR COMPOUNDS (compositions based on polymerisable monomers C08F, C08G; artificial filaments or fibres D01F; textile treating compositions D06) - C08J: WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H (working, e.g. shaping, of plastics B29) - C08K: Use of inorganic or non-macromolecular organic substances as compounding ingredients (paints, inks, varnishes, dyes, polishes, adhesives C09) - C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - C08G: MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS ## Abstract A thermal-conductive silicone composition containing: (A) a hydrolysable organopolysiloxane having an alkoxysilyl group; and (B) aluminum nitride particles having an average particle size of 0.5 μm or more and 2.0 μm or less and contained in an amount of 50 to 70 volume %. A content of coarse particles in the aluminum nitride particles is 1.0 volume % or less relative to the entire aluminum nitride particles, the coarse particles having particle sizes of 10 μm or more according to a particle size distribution measurement method by laser diffraction. The thermal-conductive silicone composition has a heat conductivity of 1.3 W/mK or more according to a hot disc method. The present invention provides: a thermal-conductive silicone composition having high heat conductivity and being compressible to 10 μm or less; and a production method of the thermal-conductive silicone composition. ## Claims ### Claim 1 A thermal-conductive silicone composition comprising the following components (A) and (B): (A) a hydrolysable organopolysiloxane having an alkoxysilyl group; and (B) aluminum nitride particles having an average particle size of 0.5 μm or more and 2.0 μm or less and contained in an amount of 50 to 70 volume %, wherein a content of coarse particles in the aluminum nitride particles is 1.0 volume % or less relative to the entire aluminum nitride particles, the coarse particles having particle sizes of 10 μm or more according to a particle size distribution measurement method by laser diffraction, and the thermal-conductive silicone composition has a heat conductivity of 1.3 W/mK or more according to a hot disc method. ### Claim 2 (depends on 1) The thermal-conductive silicone composition according to claim 1, wherein the aluminum nitride particles have an oxygen content of 1.0 mass % or less. ### Claim 3 (depends on 1) The thermal-conductive silicone composition according to claim 1, wherein the thermal-conductive silicone composition has a thermal resistance of 5.0 mm2·K/W or less as measured at 25° C. by a laser flash method. ### Claim 4 (depends on 2) The thermal-conductive silicone composition according to claim 2, wherein the thermal-conductive silicone composition has a thermal resistance of 5.0 mm2·K/W or less as measured at 25° C. by a laser flash method. ### Claim 5 (depends on 1) The thermal-conductive silicone composition according to claim 1, wherein the thermal-conductive silicone composition has an absolute viscosity of 3 to 500 Pa·S as measured with a spiral viscometer at 25° C. and a shear rate of 6 S-1. ### Claim 6 (depends on 2) The thermal-conductive silicone composition according to claim 2, wherein the thermal-conductive silicone composition has an absolute viscosity of 3 to 500 Pa·S as measured with a spiral viscometer at 25° C. and a shear rate of 6 S-1. ### Claim 7 (depends on 3) The thermal-conductive silicone composition according to claim 3, wherein the thermal-conductive silicone composition has an absolute viscosity of 3 to 500 Pa·S as measured with a spiral viscometer at 25° C. and a shear rate of 6 S-1. ### Claim 8 (depends on 4) The thermal-conductive silicone composition according to claim 4, wherein the thermal-conductive silicone composition has an absolute viscosity of 3 to 500 Pa·S as measured with a spiral viscometer at 25° C. and a shear rate of 6 S-1. ### Claim 9 (depends on 1) A semiconductor device comprising the thermal-conductive silicone composition according to claim 1 interposed in a space formed between a heat generator and a cooler, the space having a thickness of 10 μm or less. ### Claim 10 (depends on 9) The semiconductor device according to claim 9, wherein the heat generator is an insulated-gate bipolar transistor. ### Claim 11 (depends on 1) A production method for producing the thermal-conductive silicone composition according to claim 1, the method comprising a step of mixing the components (A) and (B) at a temperature of 100° C. or more for 30 minutes or more. ### Claim 12 (depends on 2) A production method for producing the thermal-conductive silicone composition according to claim 2, the method comprising a step of mixing the components (A) and (B) at a temperature of 100° C. or more for 30 minutes or more. ### Claim 13 (depends on 3) A production method for producing the thermal-conductive silicone composition according to claim 3, the method comprising a step of mixing the components (A) and (B) at a temperature of 100° C. or more for 30 minutes or more. ### Claim 14 (depends on 4) A production method for producing the thermal-conductive silicone composition according to claim 4, the method comprising a step of mixing the components (A) and (B) at a temperature of 100° C. or more for 30 minutes or more. ### Claim 15 (depends on 5) A production method for producing the thermal-conductive silicone composition according to claim 5, the method comprising a step of mixing the components (A) and (B) at a temperature of 100° C. or more for 30 minutes or more. ### Claim 16 (depends on 6) A production method for producing the thermal-conductive silicone composition according to claim 6, the method comprising a step of mixing the components (A) and (B) at a temperature of 100° C. or more for 30 minutes or more. ### Claim 17 (depends on 7) A production method for producing the thermal-conductive silicone composition according to claim 7, the method comprising a step of mixing the components (A) and (B) at a temperature of 100° C. or more for 30 minutes or more. ### Claim 18 (depends on 8) A production method for producing the thermal-conductive silicone composition according to claim 8, the method comprising a step of mixing the components (A) and (B) at a temperature of 100° C. or more for 30 minutes or more.