Gas mixing system for semiconductor fabrication
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing Shing Lin, Chin Shen Hsieh
Life of this patent
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Abstract
A gas mixing system for semiconductor fabrication includes a mixing block. The mixing block defines a gas mixing chamber, a first gas channel fluidly coupled to the gas mixing chamber at a first exit location, and a second gas channel fluidly coupled to the gas mixing chamber at a second exit location, wherein the first exit location is diametrically opposite the second exit location relative to the gas mixing chamber and the second gas channel has a bend of 90 degrees or less between an entrance of the second gas channel and the second exit location.
Claims20
A method for mixing gases in semiconductor fabrication, comprising:
- introducing a first gas into a gas mixing chamber at a first speed and in a first direction;
- introducing a second gas into the gas mixing chamber at a second speed and in a second direction, wherein the first speed is different than the second speed and the first direction is diametrically opposite the second direction relative to the gas mixing chamber;
- and
- introducing a cooling fluid into a mixing block defining the gas mixing chamber, wherein:
- introducing the cooling fluid comprises introducing the cooling fluid at an entrance of a cooling channel defined in a sidewall of the mixing block, and
- introducing the first gas comprises coupling a source of the first gas to a first entrance in the sidewall of the mixing block.
A method for mixing gases in semiconductor fabrication, comprising:
- introducing a first gas into a gas mixing chamber defined by a mixing block;
- and
- introducing a cooling fluid into the mixing block, wherein:
- introducing the cooling fluid comprises introducing the cooling fluid at an entrance of a cooling channel defined in a sidewall of the mixing block, and
- introducing the first gas comprises coupling a source of the first gas to a first entrance in the sidewall of the mixing block.
A method for mixing gases in semiconductor fabrication, comprising:
- introducing a first gas into a gas mixing chamber;
- and
- introducing a second gas into the gas mixing chamber, wherein:
- introducing the first gas comprises coupling a source of the first gas to a first entrance in a sidewall of a mixing block defining the gas mixing chamber;
- and
- introducing the second gas comprises coupling a source of the second gas to a second entrance in the sidewall of the mixing block, wherein introducing the second gas comprises having the second gas traverse a bend of 90 degrees or less in a gas channel fluidly coupled between the second entrance and the gas mixing chamber, and the first entrance and the second entrance are disposed on a same side of the mixing block.
Dependencies are inferred from the claim text.