Pixel circuit configured with global shutter ensuring sufficient saturated charges

An electronic device, comprising:

• a pixel array in which a plurality of pixels are arranged in row and column directions;
• a drive circuit configured to drive pixels to be read out in the plurality of pixels;
• and
• a processing circuit configured to read out pixel signals from the pixels to be read out which are driven by the drive circuit,
• wherein each pixel of the plurality of pixels includes:
• a photoelectric conversion region configured to generate a photoelectric charge;
• a sense node, wherein the sense node is connected to the photoelectric conversion region, wherein the sense node includes a first capacitive element connected to a first voltage source, and wherein the sense node holds the photoelectric charge generated by the photoelectric conversion region;
• a floating diffusion, wherein the floating diffusion includes a second capacitive element connected to the first voltage source, and wherein the floating diffusion holds the photoelectric charge transferred from the sense node;
• a transfer transistor arranged between the sense node and the floating diffusion, wherein the transfer transistor is configured to selectively transfer the photoelectric charge held in the sense node to the floating diffusion;
• and
• an amplifier transistor between the floating diffusion and a signal line, wherein the amplifier transistor is configured to selectively cause a pixel signal of a voltage value corresponding to a charge amount of the photoelectric charge held in the floating diffusion to appear on the signal line, and wherein a first capacitance of the sense node approximates a second capacitance of the floating diffusion.

A light detecting device, comprising:

• a photoelectric conversion region configured to generate a photoelectric charge;
• a sense node, wherein the sense node is connected to the photoelectric conversion region, wherein the sense node includes a first capacitive element connected to a first voltage source, and wherein the sense node holds the photoelectric charge generated by the photoelectric conversion region;
• a floating diffusion configured to hold the photoelectric charge transferred from the sense node, wherein the floating diffusion includes a second capacitive element connected to the first voltage source;
• a transfer transistor between the sense node and the floating diffusion, wherein the transfer transistor is configured to selectively connect the sense node to the floating diffusion to transfer the photoelectric charge held in the sense node to the floating diffusion;
• and
• an amplifier transistor between the floating diffusion and a signal line, wherein the amplifier transistor is configured to selectively cause a pixel signal of a voltage value corresponding to a charge amount of the photoelectric charge held in the floating diffusion to appear on the signal line, and wherein a capacitance of the first capacitive element is smaller than a capacitance of the second capacitive element.

A light detecting device, comprising:

• a photoelectric conversion region configured to generate a photoelectric charge;
• a sense node, wherein the sense node is connected to the photoelectric conversion region, wherein the sense node includes a first capacitive element connected to a first voltage source, and wherein the sense node holds the photoelectric charge generated by the photoelectric conversion region;
• a floating diffusion configured to hold the photoelectric charge transferred from the sense node, wherein the floating diffusion includes a second capacitive element connected to the first voltage source;
• a transfer transistor between the sense node and the floating diffusion, wherein the transfer transistor is configured to selectively connect the sense node to the floating diffusion to transfer the photoelectric charge held in the sense node to the floating diffusion;
• and
• an amplifier transistor between the floating diffusion and a signal line, wherein the amplifier transistor is configured to selectively cause a pixel signal of a voltage value corresponding to a charge amount of the photoelectric charge held in the floating diffusion to appear on the signal line, and wherein an occupied area of the first capacitive element is less than an occupied area of the second capacitive element.