Electronic device and charge pump circuit
AssigneeInfineon Technologies AG
InventorsJuergen Faul, Andreas Urban Bertl, Henning Feick
Life of this patent
Estimating the term…
Abstract
An electronic device is disclosed. The electronic device includes: a first doped region of a first doping type arranged in a first semiconductor layer of a second doping type complementary to the first doping type; an insulation layer formed on top of the first semiconductor layer and adjoining the first doped region; at least two active device regions arranged in a second semiconductor layer formed on top of the insulation layer; and an electrical connection between one of the at least two active device regions and the first doped region. Each of the at least two active device regions is arranged adjacent to the first doped region and separated from the first doped region by the insulation layer.
Claims14
An electronic device, comprising:
- a first doped region of a first doping type arranged in a first semiconductor layer of a second doping type complementary to the first doping type;
- an insulation layer formed on top of the first semiconductor layer and adjoining the first doped region;
- at least two active device regions arranged in a second semiconductor layer formed on top of the insulation layer;
- and
- an electrical connection between one of the at least two active device regions and the first doped region,
- wherein each of the at least two active device regions is arranged adjacent to the first doped region and separated from the first doped region by the insulation layer,
- wherein the electronic device is a diode in which one of the at least two active device regions is an anode region and another one of the at least two active device regions is a cathode region.
An electronic device, comprising:
- a first doped region of a first doping type arranged in a first semiconductor layer of a second doping type complementary to the first doping type;
- an insulation layer formed on top of the first semiconductor layer and adjoining the first doped region;
- at least two active device regions arranged in a second semiconductor layer formed on top of the insulation layer;
- and
- an electrical connection between one of the at least two active device regions and the first doped region,
- wherein each of the at least two active device regions is arranged adjacent to the first doped region and separated from the first doped region by the insulation layer,
- wherein one of the at least two active device regions forms an anode region and another one of the at least two active device regions forms a cathode region.
Dependencies are inferred from the claim text.