Reflection mode photomask
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Lang Chen, Chih-Chiang Tu
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Abstract
A reflection mode photomask includes a multilayer over a substrate. The reflection mode photomask further includes a plurality of absorber stacks over the multilayer. Each absorber stack of the plurality of absorber stacks includes an absorber layer, wherein a material of the absorber layer is selected from the group consisting of tantalum oxynitride and tantalum silicon oxynitride. Each absorber stack of the plurality of absorber stacks further includes an anti-reflective coating (ARC) layer on the absorber layer, wherein a material of the ARC layer is selected from the group consisting of tantalum nitride and tantalum silicon.
Claims20
A reflection mode photomask, comprising:
- a reflective multilayer over a substrate;
- and
- a plurality of absorber stacks over the reflective multilayer, wherein each absorber stack of the plurality of absorber stacks comprises:
- an absorber layer, wherein a material of the absorber layer is selected from the group consisting of tantalum oxynitride and tantalum silicon oxynitride, and
- an anti-reflective coating (ARC) layer on the absorber layer, wherein a material of the ARC layer is selected from the group consisting of tantalum nitride and tantalum silicon.
A mask comprising:
- a reflective multilayer over a substrate;
- an etch stop layer extending over an entirety of a top surface of the reflective multilayer, wherein the etch stop layer comprises silicon or silicon compounds;
- an absorber layer over the etch stop layer, wherein the absorber layer comprises tantalum oxynitride or tantalum silicon oxynitride;
- and
- an anti-reflective coating (ARC) layer directly over the absorber layer, wherein the ARC layer is a single material film, the ARC layer comprises tantalum, a material of the ARC layer is different from a material of the absorber layer, and the material of the ARC layer is free of oxygen.
A reflection mode photomask, comprising:
- a reflective multilayer over a substrate;
- and
- a plurality of absorber stacks over the reflective multilayer, wherein each absorber stack of the plurality of absorber stacks comprises:
- an absorber layer, wherein a material of the absorber layer is selected from the group consisting of tantalum oxynitride and tantalum silicon oxynitride, and
- an ARC layer on the absorber layer, wherein a material of the ARC layer comprises tantalum, the material of the ARC layer is free of oxygen, and the material of the ARC layer is different from the material of the absorber layer.
Dependencies are inferred from the claim text.