System and method for particle control in MRAM processing

A method for particle control in a film deposition system comprising:

• providing a plasma to be in direct contact with at least one target in a processing chamber, thereby generating at least one charged atom;
• generating an external force on the at least one charged atom in the plasma so as to direct the at least one charged atom to a substrate;
• and
• directing the at least one charged atom onto a surface of the substrate at a first position on the surface.

A film deposition system comprising:

• a processing chamber sealable to create a pressurized environment and configured to contain a plasma, a target and a substrate in the pressurized environment;
• and
• a particle control unit, wherein the particle control unit is configured to provide an external force to at least one charged atom in the plasma,
• wherein the external force is configured to direct the at least one charged atom to a top surface of the substrate, wherein the substrate is supported by a stage disposed inside the processing chamber,
• wherein the particle control unit is further configured to provide a magnetic field between a first electromagnetic coil and a second electromagnetic coil in the particle control unit.