Pattern measurement device and pattern measurement method

A pattern measurement device comprising:

• a calculation device that calculates a positional deviation amount between upper and lower parts of a pattern formed on a sample based on image data obtained by irradiating the sample with a charged particle beam at a predetermined beam incident angle, and compares or references the calculated positional deviation amount with a model acquired in advance between a positional deviation amount and an inclination amount of the pattern;
• wherein when a relative angle between the charged particle beam and a perpendicular of a sample surface, a relative angle between the charged particle beam and an ideal optical axis of an electron optical system, or a relative angle between the charged particle beam and a perpendicular in a moving direction of the sample is defined as the beam incident angle, the beam incident angle is an angle other than zero degrees.

A pattern measurement device comprising:

• a calculation device that calculates a positional deviation amount between upper and lower parts of a pattern formed on a sample based on image data obtained by irradiating the sample with a charged particle beam at a predetermined beam incident angle, and compares or references the calculated positional deviation amount with a model acquired in advance between a positional deviation amount and an inclination amount of the pattern;
• wherein based on a determination result of comparison or reference with the model, the calculation device controls a beam incident angle to match the inclination amount of the pattern and acquires again image data.

A non-transitory computer-readable medium storing a pattern measurement program that causes a computer to execute processing of calculating a positional deviation amount between upper and lower parts of a pattern formed on a sample based on image data obtained by irradiating the sample with a charged particle beam at a predetermined beam incident angle, and comparing or referencing the calculated positional deviation amount with a model acquired in advance between a positional deviation amount and an inclination amount of the pattern;

• wherein when a relative angle between the charged particle beam and a perpendicular of a sample surface, a relative angle between the charged particle beam and an ideal optical axis of an electron optical system, or a relative angle between the charged particle beam and a perpendicular in a moving direction of the sample is defined as the beam incident angle, the beam incident angle is zero degrees.

A pattern measurement method comprising:

• a calculation step of calculating a positional deviation amount between upper and lower parts of a pattern formed on a sample based on image data obtained by irradiating the sample with a charged particle beam at a predetermined beam incident angle, and comparing or referencing the calculated positional deviation amount with a model acquired in advance between a positional deviation amount and an inclination amount of the pattern;
• wherein the calculation step includes, based on a determination result of comparison or reference with the model, controlling a beam incident angle to match the inclination amount of the pattern and acquiring again image data, and executing one or more retry steps based on a result of comparison between a positional deviation amount calculated from the image data acquired again and a preset threshold or allowable range.

A pattern measurement method comprising:

• a calculation step of calculating a positional deviation amount between upper and lower parts of a pattern formed on a sample based on image data obtained by irradiating the sample with a charged particle beam at a predetermined beam incident angle, and comparing or referencing the calculated positional deviation amount with a model acquired in advance between a positional deviation amount and an inclination amount of the pattern;
• wherein the inclination amount of the pattern is one of an amount of inclination with respect to a direction perpendicular to a sample surface, an amount of inclination with respect to a direction perpendicular to the sample or a Z axis, an amount of inclination with respect to an etching direction of the pattern, and an amount of inclination with respect to a direction perpendicular to the pattern or a depth direction.