Substrate processing apparatus and substrate processing method
AssigneeTokyo Electron Limited
InventorsTakashi Yabuta, Hidetoshi Nakao, Masatoshi Kasahara, Daisuke Saiki
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AssigneeTokyo Electron Limited
InventorsTakashi Yabuta, Hidetoshi Nakao, Masatoshi Kasahara, Daisuke Saiki
Estimating the term…
A substrate processing apparatus includes: at least one processing part for etching a polysilicon film or an amorphous silicon film formed on a substrate using an alkaline chemical liquid; a reservoir configured to recover and store the chemical liquid used in the at least one processing part; processing lines configured to supply the chemical liquid stored in the reservoir to the at least one processing part; a circulation line configured to take out the chemical liquid from the reservoir and to return the same to the reservoir; and a first gas supply line connected to the circulation line and configured to supply an inert gas to the circulation line. The circulation line includes an ejection port configured to eject a mixed fluid of the inert gas supplied by the first gas supply line and the chemical liquid taken out from the reservoir into the chemical liquid stored in the reservoir.
A substrate processing apparatus comprising:
Dependencies are inferred from the claim text.