Substrate processing apparatus and method

A substrate processing method to create a sacrificial masking layer comprising:

• providing a substrate with a radiation modifiable layer to a lithographic projection apparatus for locally modifying the radiation modifiable layer;
• locally modifying the radiation modifiable layer of the substrate with exposure radiation of the lithographic projection apparatus to modify a modified layer portion of the radiation modifiable layer where it is exposed to radiation and to leave unmodified an unmodified layer portion of the radiation modifiable layer where it is not exposed to radiation;
• moving the substrate from the lithographic projection apparatus to a reaction chamber of a selective deposition device;
• performing a selective atomic layer deposition (ALD) cycle, the selective ALD cycle comprising:
• providing a first precursor selected to react with a reacting portion and not react with a non-reacting portion in the reaction chamber, the reacting portion including one of the modified and unmodified layer portions, the non-reacting portion including the other one of the modified and unmodified layer portions, wherein the first precursor comprises a material selected from the group consisting of a metal, silicon (Si), and germanium (Ge);
• selectively growing at least a portion of the sacrificial masking layer on the reacting portion relative to the non-reacting portion by contacting the reacting portion and the non-reacting portion with the first precursor;
• and subsequently
• purging, by flowing a purge gas through the reaction chamber, an unreacted portion of the first precursor and/or reaction by-products from the reaction chamber to leave the non-reacting portion as an exposed portion of the modified and unmodified layer portions.