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US 12,168,603 B2Granted
Monolithic post complementary metal-oxide-semiconductor integration of thermoelectric-based infrared detector
AssigneeMeridian Innovation Pte Ltd
InventorsWan Chia Ang, Piotr Kropelnicki, Ilker Ender Ocak
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Abstract
A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device monolithically after CMOS processing. For example, the MEMS sensors are formed over a BEOL dielectric of a CMOS device. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region.
Claims20
A method for forming a device comprising:
- providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region with CMOS components
- forming a BE dielectric over the CMOS components, wherein the BE dielectric comprises multiple interconnect and via levels with interconnects and via contacts for interconnecting the CMOS components;
- forming a MEMS level on the BE dielectric, wherein the MEMS level comprises a MEMS region with a MEMS component, the MEMS component includes recrystallized polysilicon MEMS structures, wherein the MEMS level occupies a portion of the BE dielectric;
- forming a substrate sealing ring on the BE dielectric surrounding the MEMS level;
- providing a cap having a cap inner surface and a cap outer surface, wherein the cap inner surface includes a cap sealing ring;
- and
- bonding the cap sealing ring of the cap to the substrate sealing ring on the BE dielectric to hermetically seal the MEMS level.
4 more elements
A device comprising:
- a substrate prepared with
- a complementary metal oxide semiconductor (CMOS) region with CMOS components, and
- a BE dielectric over the CMOS components, wherein the BE dielectric comprises interconnect and via levels with interconnects and via contacts for interconnecting the CMOS components;
- a MEMS level over the BE dielectric, wherein the MEMS level comprises a MEMS region with a MEMS component, the MEMS component includes recrystallized polysilicon structures, wherein the MEMS level occupies a portion over the BE dielectric;
- a substrate sealing ring on the BE dielectric surrounding the MEMS level;
- a cap having a cap inner surface and a cap outer surface, wherein the cap inner surface includes a cap sealing ring;
- and
- wherein the cap sealing ring of the cap is bonded to the substrate bonding ring on the BE dielectric to hermetically seal the MEMS level.
5 more elements
A method for forming a device comprising:
- providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region with CMOS components;
- forming a BE dielectric over the CMOS components, wherein the BE dielectric comprises multiple levels of interconnect and via levels with interconnects and via contacts for interconnecting the CMOS components;
- forming a sacrificial layer over the BE dielectric;
- forming a MEMS level on the sacrificial layer, wherein the MEMS level comprises an amorphous silicon MEMS structure layer;
- patterning the MEMS level to form a MEMS structure in a MEMS region;
- recrystallizing the amorphous silicon of the MEMS structure to form a recrystallized polysilicon MEMS structure;
- removing the sacrificial layer below the MEMS structure to form a MEMS cavity between the MEMS structure and BE dielectric;
- forming a substrate sealing ring on the BE dielectric surrounding the MEMS structure;
- providing a cap having a cap inner surface and a cap outer surface, wherein the cap inner surface includes a cap sealing ring;
- and
- bonding the cap sealing ring of the cap to the substrate sealing ring on the BE dielectric to hermetically seal the MEMS structure in the MEMS region.
8 more elements
Dependencies are inferred from the claim text.