Embedded microstrip transmission line
AssigneeInternational Business Machines Corporation
InventorsIsaac Lauer, William Francis Landers, Srikanth Srinivasan, Neereja Sundaresan
Life of this patent
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Abstract
Techniques regarding an embedded microstrip transmission line implemented in one more superconducting microwave electronic devices are provided. For example, one or more embodiments described herein can comprise an apparatus, which can include a superconducting material layer positioned on a raised portion of a dielectric substrate. The raised portion can extend from a surface of the dielectric substrate. The apparatus can also comprise a dielectric film that covers at least a portion of the superconducting material layer and the raised portion of the dielectric substrate.
Claims20
An apparatus, comprising:
- a superconducting material layer positioned on a raised portion of a dielectric substrate;
- and
- a dielectric film that covers at least a portion of the superconducting material layer and at least a portion of the raised portion of the dielectric substrate, wherein the dielectric film has a loss tangent that is less than or equal to 5e−5 at a frequency that is between 4.5 gigahertz and 5.5 gigahertz.
A method, comprising:
- depositing a superconducting material layer onto a dielectric substrate;
- positioning the superconducting material layer onto a raised portion of the dielectric substrate by etching into the superconducting material layer and the dielectric substrate;
- and
- depositing a dielectric film onto the superconducting material layer, wherein the dielectric film has a loss tangent that is less than or equal to 5e−5 at a frequency that is between 4.5 gigahertz and 5.5 gigahertz.
An apparatus, comprising:
- a first chip that includes a superconducting qubit positioned on a first dielectric substrate;
- and
- a second chip bonded to the first chip that includes:
- a superconducting material layer positioned on a raised portion of a second dielectric substrate, and a dielectric film that covers at least a portion of the superconducting material layer and the raised portion, wherein the dielectric film has a loss tangent that is less than or equal to 5e−5 at a frequency that is between 4.5 gigahertz and 5.5 gigahertz wherein the raised portion extends from a surface of the second dielectric substrate.
Dependencies are inferred from the claim text.