Semiconductor structure and method for forming the same

A method for forming a semiconductor structure, comprising:

• forming a first metallization layer and a first cap layer over a substrate, wherein the first metallization layer and the first cap layer comprise different materials;
• removing portions of the first metallization layer and portions of the first cap layer to form at least a hybrid structure over the substrate;
• forming a first dielectric structure surrounding the hybrid structure;
• forming a second cap layer over the hybrid structure, wherein the second cap layer comprises a material different from the material of the first cap layer;
• forming a protecting layer over the substrate, wherein the protecting layer comprises a material different from a material of the first dielectric structure;
• forming a second dielectric structure over the substrate;
• forming a trench in the second dielectric structure, the protecting layer and the second cap layer;
• removing the first cap layer to form a via opening;
• and
• filling the via opening and the trench with a second metallization layer.

A method for forming a semiconductor structure, comprising:

• forming a first metallization layer and a first cap layer over a substrate;
• removing portions of the first metallization layer and portions of the first cap layer to form a plurality of first metallization features and recesses separating the plurality of first metallization features over the substrate;
• forming a first protecting layer over the substrate;
• forming a first dielectric structure over the first protecting layer and filling the recesses;
• forming a second cap layer over the first cap layer, at least one of first metallization features and portions of the first dielectric structure;
• forming a second protecting layer over the second cap layer;
• forming a second dielectric structure having a trench over the substrate;
• removing the first cap layer to form a via opening coupled to the trench;
• and
• forming a via structure in the via opening and a second metallization feature in the trench.