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US 12,165,850 B2Granted
Electrode for plasma processing apparatus and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorTakaki Kobune
Life of this patent
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Abstract
An electrode for a plasma processing apparatus is provided. The electrode comprises: a first conductive member; and a second member disposed in the first member and made of a material having a secondary electron emission coefficient different from a secondary electron emission coefficient of the first member.
Claims12
An electrode for a plasma processing apparatus, comprising:
- a first member that is conductive;
- and a second member disposed in the first member and made of a material having a secondary electron emission coefficient different from a secondary electron emission coefficient of the first member;
- wherein the second member is disposed only in an outer peripheral area, and wherein the first member is radially divided into an inner peripheral area, and intermediate area, and the outer peripheral area, in that order from a center of the first member.
A plasma processing apparatus comprising:
- a plasma processing chamber;
- a substrate support disposed in the plasma processing chamber;
- and an electrode disposed to face the substrate support, wherein the electrode includes:
- a first member that is conductive;
- and a second member disposed in the first member and made of a material having a secondary electron emission coefficient different from a secondary electron emission coefficient of the first member;
- wherein the second member is disposed only in an outer peripheral area, and wherein the first member is radially divided into an inner peripheral area, and intermediate area, and the outer peripheral area, in that order from a center of the first member.
3 more elements
Dependencies are inferred from the claim text.