3D capacitor and capacitor array fabricating photoactive substrates
Assignee3D Glass Solutions, Inc.
InventorsJeb H. Flemming, Jeff A. Bullington, Kyle McWethy
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Abstract
The present invention provides a method of fabrication and device made by preparing a photosensitive glass substrate comprising at least silica, lithium oxide, aluminum oxide, and cerium oxide, masking a design layout comprising one or more holes or post to form one or more high surface area capacitive device for monolithic system level integration on a glass substrate.
Claims15
A method of making a capacitive device within one or more three-dimensional structures etched within a single photosensitive glass ceramic substrate, comprising:
- providing a photosensitive glass ceramic substrate comprising silica, lithium oxide, aluminum oxide, and cerium oxide;
- masking a design layout on the photosensitive glass ceramic substrate, wherein the design layout comprises one or more structures to form one or more three-dimensional structures;
- exposing at least one portion of the photosensitive glass ceramic substrate to an activating energy source;
- heating the photosensitive glass ceramic substrate for at least ten minutes to a temperature above its glass transition temperature;
- cooling the photosensitive glass ceramic substrate to transform at least part of the exposed photosensitive glass ceramic substrate to a crystalline material to form a glass-crystalline substrate;
- etching the glass-crystalline substrate with an etchant solution to form the one or more three-dimensional etched structures in the glass-crystalline substrate, wherein the etched glass-crystalline substrate and an unexposed portion of the photosensitive glass substrate have an anisotropic etch ratio of at least 30:1;
- rinsing an interior surface of each of the one or more three dimensional etched structures with a dilute glass etchant to increase the surface area of the interior surface to increase a capacitance of the glass ceramic capacitive device;
- coating at least a portion of the interior surface of each of the one or more three dimensional etched structures with a first metal to form a bottom electrode;
- coating at least a portion of the bottom electrode with a dielectric media;
- coating at least a portion of the dielectric media with a second metal to form a top electrode;
- and
- removing at least a portion of the top electrode and the dielectric media to provide an electrical contact configured to make an electrical connection between the capacitive device and a circuitry.
A capacitive device comprising:
- a photosensitive glass ceramic substrate comprising:
- silica, lithium oxide, aluminum oxide, and cerium oxide;
- a glass-crystalline substrate;
- and
- one or more three-dimensional structures etched in the glass-crystalline substrate, wherein the glass-crystalline substrate and a non-glass-crystalline portion of the photosensitive glass substrate have an anisotropic etch ratio of at least 30:1, each three-dimensional structure comprising an interior surface with a high-surface-area texture;
- a first metal coating disposed on at least a portion the interior surface of each three-dimensional structure as a bottom electrode;
- a dielectric coating disposed on a least a portion of the bottom electrode;
- a second metal coating disposed on at least a portion of the dielectric coating as a top electrode;
- and
- one or more surface contacts or one or more buried contacts in electrical communication with the bottom electrode or the top electrode and configured to be connected to a circuitry.
A capacitive device comprising:
- a single photosensitive glass ceramic substrate comprising:
- silica, lithium oxide, aluminum oxide, and cerium oxide;
- a first glass-crystalline substrate;
- a second glass-crystalline substrate;
- a three-dimensional structure etched in the first glass-crystalline substrate and the second glass-crystalline substrate, wherein the first and second glass-crystalline substrates and a non-glass-crystalline portion of the photosensitive glass substrate have an anisotropic etch ratio of at least 30:1;
- a first metal coating disposed on the first glass-crystalline substrate;
- a second metal coating disposed on the second glass-crystalline substrate;
- a layer of dielectric material disposed between the first glass-crystalline substrate and the second glass-crystalline substrate;
- and
- one or more vias, one or more post channels, or a combination thereof directly connecting the first glass-crystalline substrate and the second glass-crystalline substrate, wherein the one or more vias or one or more post channels are formed having a high-surface area texture that provides an increased capacitance in the capacitive device.
Dependencies are inferred from the claim text.