Memory devices comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls and methods of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls

A method of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls, comprising:

• forming a vertical stack comprising a series of vertically-alternating regions, immediately adjacent of the vertically-alternating regions being of different composition relative one another, a plurality of each of the vertically-alternating regions being in the vertical stack;
• etching longitudinally elongated first trenches elevationally through at least some of the vertically-alternating regions of the vertical stack, the first trenches individually comprising opposing sidewalls and a base;
• forming magnetic track material within individual of the first trenches against the opposing first trench sidewalls and the first trench base, and
• etching longitudinally elongated second trenches elevationally through the magnetic track material and at least some of the vertically-alternating regions to form magnetic tracks which individually comprise a plurality of magnetic domains having domain walls, the second trenches longitudinally angling relative to the first trenches, interfaces of immediately adjacent of the vertically-alternating regions along an individual of the sidewalls individually comprising a domain wall pinning site in the magnetic track along that sidewall.