Method for producing silicon ingot single crystal

A manufacturing method of a silicon ingot single crystal, which manufactures the silicon ingot single crystal by means of a non-contact crucible (NOC) method, comprising:

• a silicon ingot single crystal growing step, wherein the silicon ingot single crystal is grown in a silicon melt in a crucible, and the silicon ingot single crystal growing step comprises:
• providing a low-temperature region in the silicon melt;
• and
• providing a silicon seed to contact a melt surface to start crystal growth, wherein a silicon single crystal grows along the melt surface and toward the inside of the silicon melt;
• a controlling step for controlling temperature gradients of the silicon single crystal, wherein an under-surface temperature gradient of the silicon single crystal under the melt surface is set as G1, an above-surface temperature gradient of the silicon single crystal above the melt surface is set as G2, and the under-surface temperature gradient G1 and the above-surface temperature gradient G2 of the silicon single crystal satisfy a formula (1):
• G2/G1<6 (1);
• and
• a continuous growing step, wherein the step of controlling the temperature gradients of the silicon single crystal is repeated to obtain the silicon ingot single crystal.