Circuit device including an impedance matching network having at least one inductor formed by a film of superconductor material exhibiting kinetic sheet inductance

A circuit device comprising:

• a semiconductor device, and
• an impedance matching network, wherein the impedance matching network comprises a superconductor material forming at least one inductor of the circuit device, wherein the superconductor material exhibits a kinetic sheet inductance when in a superconducting state,
• wherein a total kinetic inductance of the at least one inductor is between 1 nH and 100 nH for microwave signals, and
• wherein the impedance matching network is configured to transform an impedance of the semiconductor device to match a predetermined second impedance during operation of the circuit device.

A circuit device comprising:

• a semiconductor device, and
• an impedance matching network, wherein the impedance matching network comprises a film of superconductor material forming at least one inductor of the circuit device, wherein the film of the superconductor material exhibits a kinetic sheet inductance when in a superconducting state,
• wherein the impedance matching network is configured to transform an impedance of the semiconductor device to match a predetermined second impedance during operation of the circuit device, and
• wherein the semiconductor device and the at least one inductor are formed as part of an integrated circuit integrated in a single chip,
• wherein the single chip comprises a plurality of metal layers buried at respective heights in a dielectric material,
• at least a first of the plurality of metal layers including a contact trace coupled to the semiconductor device, and
• at least a second of the plurality of metal layers including the film of the superconductor material.

A cryogenic amplifier circuit comprising:

• a plurality of semiconductor transistors;
• and
• an impedance matching network coupled to a first semiconductor transistor of the plurality of semiconductor transistors, the impedance matching network comprising at least one kinetic inductor comprising a superconductor material,
• wherein the superconductor material exhibits a kinetic sheet inductance when in a superconducting state, and
• wherein an impedance of the cryogenic amplifier circuit matches a predetermined second impedance.