Etching apparatus and etching method
AssigneeTokyo Electron Limited
InventorsKoichi Nagami, Kazuya Nagaseki
Life of this patent
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Abstract
An etching apparatus includes: a placement table serving as a lower electrode and configured to place a workpiece to be subjected to an etching processing thereon; a DC power supply configured to generate a negative DC voltage applied to the placement table; and a controller configured to: periodically apply a negative DC voltage to the placement table from the DC power supply when the etching processing on the workpiece placed on the placement table is initiated, and decrease a frequency of the negative DC voltage applied to the placement table with an elapse of processing time of the etching processing.
Claims20
A plasma processing apparatus comprising:
- a plasma processing container;
- a workpiece placement table disposed in the plasma processing container;
- an electrode disposed in the workpiece placement table;
- a DC power supply electrically connected to the electrode;
- and
- a controller configured to control the DC power supply to:
- (i) apply a pulsed negative DC voltage to the electrode from the DC power supply;
- and
- (ii) linearly decrease a frequency of the pulsed negative DC voltage applied to the electrode over a plasma processing time.
A plasma etching apparatus comprising:
- a plasma processing container;
- a workpiece placement table disposed in the plasma processing container;
- an electrode disposed in the workpiece placement table;
- a DC power supply electrically connected to the electrode;
- a radio-frequency power supply which applies a radio-frequency power to form a plasma in the plasma processing container;
- and
- a controller configured to:
- (i) control the DC power supply to apply a pulsed negative DC voltage to the electrode;
- (ii) control the radio-frequency power supply to commence application of the radio-frequency power to form the plasma and etch a workpiece on the workpiece placement table;
- and
- (iii) after commencement of the application of the radio-frequency power, controlling the DC power supply to at least one of:
- linearly decrease a frequency of the pulsed negative DC voltage applied to the electrode or increase an absolute value of voltage applied to the electrode over a plasma processing time.
Dependencies are inferred from the claim text.