Bulk acoustic wave resonator on multi-layer piezoelectric substrate acoustic wave device

An acoustic wave filter component comprising:

• a first boundary wave resonator supported by a first portion of a first support substrate, the first boundary wave resonator including a first piezoelectric layer and an interdigital transducer electrode on the first piezoelectric layer;
• a bulk acoustic wave resonator supported by a second support substrate, the second support substrate positioned over the first boundary wave resonator, the bulk acoustic wave resonator located on an opposite side of the second support substrate as the interdigital transducer electrode of the first boundary wave resonator;
• and
• an internal via extending through the first support substrate, the first boundary wave resonator in electrical communication with a second boundary wave resonator by way of the internal via extending through the first support substrate.

An acoustic wave filter component comprising:

• a first boundary wave resonator supported by a first portion of a first support substrate, the first boundary wave resonator including a first piezoelectric layer and an interdigital transducer electrode on the first piezoelectric layer;
• a bulk acoustic wave resonator supported by a second support substrate, the second support substrate positioned over the first boundary wave resonator, the bulk acoustic wave resonator located on an opposite side of the second support substrate as the interdigital transducer electrode of the first boundary wave resonator;
• and
• an internal via extending through the first and second support substrates, a second boundary wave resonator in electrical communication with the bulk acoustic wave resonator by way of the internal via extending through the first and second support substrates.

An acoustic wave filter component comprising:

• a boundary wave resonator supported by a first portion of a first support substrate, the boundary wave resonator including a first piezoelectric layer and an interdigital transducer electrode on the first piezoelectric layer;
• a bulk acoustic wave resonator supported by a second support substrate, the second support substrate positioned over the boundary wave resonator, the bulk acoustic wave resonator located on an opposite side of the second support substrate as the interdigital transducer electrode of the boundary wave resonator;
• and
• a low velocity layer located between the first piezoelectric layer and the second support substrate.

An acoustic wave filter component comprising:

• a first boundary wave resonator supported by a first portion of a first support substrate, the first boundary wave resonator including a first piezoelectric layer and an interdigital transducer electrode on the first piezoelectric layer;
• a bulk acoustic wave resonator supported by a second support substrate, the second support substrate positioned over the first boundary wave resonator the bulk acoustic wave resonator located on an opposite side of the second support substrate as the interdigital transducer electrode of the first boundary wave resonator;
• and
• a third support substrate located on the opposite side of the first support substrate as the second support substrate, and a second boundary wave resonator, the second boundary wave resonator including a second piezoelectric layer and a second interdigital transducer electrode on the second piezoelectric layer.

An acoustic wave filter component comprising:

• a first boundary wave resonator supported by a first support substrate, the first boundary wave resonator including a first interdigital transducer electrode, the first interdigital transducer electrode located adjacent a first piezoelectric layer;
• a second boundary wave resonator separated from the first boundary wave resonator by a second support substrate, the second boundary wave resonator including a second interdigital transducer electrode, the second interdigital transducer electrode located adjacent a second piezoelectric layer;
• and
• a bulk acoustic wave resonator separated from the second boundary wave resonator by a third support substrate, the bulk acoustic wave resonator including a third piezoelectric layer and first and second electrodes on opposing sides of the third piezoelectric layer.