Semiconductor structure with wraparound backside amorphous layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Chuan Chiu, Huan-Chieh Su, Pei-Yu Wang, Cheng-Chi Chuang, Chun-Yuan Chen, Li-Zhen Yu, Chia-Hao Chang, Yu-Ming Lin, Chih-Hao Wang
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Abstract
A semiconductor structure includes an epitaxial region having a front side and a backside. The semiconductor structure includes an amorphous layer formed over the backside of the epitaxial region, wherein the amorphous layer includes silicon. The semiconductor structure includes a first silicide layer formed over the amorphous layer. The semiconductor structure includes a first metal contact formed over the first silicide layer.
Claims20
A semiconductor structure, comprising:
- a plurality of nanostructures vertically spaced apart from each other;
- an epitaxial feature coupled to one end of each of the plurality of nanostructures and having a front side and a backside;
- an amorphous semiconductor layer formed around the epitaxial feature on the backside;
- a first silicide layer formed over the amorphous semiconductor layer;
- and
- a first metal contact formed over the first silicide layer.
A semiconductor structure, comprising:
- a plurality of nanostructures vertically spaced apart from each other;
- a first epitaxial feature coupled to a first end of each of the plurality of nanostructures and having a front side and a backside;
- a second epitaxial feature coupled to a second, opposite end of each of the plurality of nanostructures and having a front side and a backside;
- a first amorphous semiconductor layer formed around the first epitaxial feature on its backside;
- a first silicide layer formed over the first amorphous semiconductor layer;
- a second amorphous semiconductor layer formed around the second epitaxial feature on its backside;
- a second silicide layer formed over the second amorphous semiconductor layer.
A semiconductor structure, comprising:
- an epitaxial feature;
- an amorphous semiconductor layer extending along a bottom surface and along a first portion of each sidewall of the epitaxial feature;
- a first silicide layer formed over the amorphous semiconductor layer;
- a first metal contact formed over the first silicide layer;
- a second silicide layer extending along a top surface and along a second portion of each sidewall of the epitaxial feature;
- and
- a second metal contact formed over the second silicide layer.
Dependencies are inferred from the claim text.