Increasing device density and reducing cross-talk spacer structures

An integrated chip comprising:

• a first source/drain region arranged over a substrate;
• a second source/drain region arranged over the substrate;
• a channel structure arranged over the substrate and laterally between the first source/drain region and the second source/drain region in a first dimension;
• a gate electrode arranged directly over the channel structure;
• a first air spacer structure arranged on a first sidewall of the gate electrode and directly over the channel structure;
• a second air spacer structure arranged on a second sidewall of the gate electrode and directly over the channel structure;
• a dielectric layer arranged directly between the gate electrode and the channel structure and arranged directly on outer sidewalls of the gate electrode;
• and
• a sealing structure localized to a top of the first air spacer structure and exposed within the first air spacer structure, wherein the sealing structure demarcates a top boundary of the first air spacer structure and has a top surface level with a top surface of the dielectric layer;
• wherein the gate electrode has a third sidewall, which faces away from the channel structure laterally in a second dimension orthogonal to the first dimension and which is smooth continuously from a topmost edge of the gate electrode to a location recessed relative to a topmost edge of the channel structure, and wherein the integrated chip is devoid of an air spacer structure arranged on the third sidewall.

An integrated chip comprising:

• a first source/drain region arranged over a substrate;
• a second source/drain region arranged over the substrate;
• a channel structure arranged over the substrate and between the first source/drain region and the second source/drain region;
• a gate electrode arranged directly over the channel structure;
• a first air spacer structure arranged on a first sidewall of the gate electrode and directly over the channel structure;
• a second air spacer structure arranged on a second sidewall of the gate electrode and directly over the channel structure;
• a conductive layer overlying the gate electrode;
• a filler layer overlying the conductive layer and being dielectric;
• a dielectric layer arranged directly between the gate electrode and the channel structure, and arranged directly on outer sidewalls of the gate electrode, outer sidewalls of the conductive layer, and outer sidewalls of the filler layer, wherein a top surface of the dielectric layer is level with a top surface of the filler layer;
• and
• a spacer structure directly exposed within and demarcating a bottom boundary of the first air spacer structure and further having a top surface level with the top surface of the dielectric layer;
• wherein a top boundary of the first air spacer structure is elevated relative to a top surface of the conductive layer.