Laser annealing method, laser annealing device, and crystallized silicon film substrate

A laser annealing method for forming a crystallized silicon film after lateral crystal growth of growing crystals in an amorphous silicon film with a technique of moving a laser beam relative to the amorphous silicon film in a unidirectional direction, comprising:

• a first laser beam irradiation of irradiating the amorphous silicon film with a first laser beam for transformation of the amorphous silicon film to a microcrystalline silicon film, wherein the amorphous silicon film is irradiated with the first laser beam to continuously transform the amorphous silicon film to the microcrystalline silicon film along the unidirectional direction, and
• a second laser beam irradiation of carrying out irradiation of a region reserved for the lateral crystal growth of growing crystals with a second laser beam along the unidirectional direction with the microcrystalline silicon film as a starting point for lateral crystal growth of growing crystals constituting the crystallized silicon film, wherein the irradiation with the second laser beam with the microcrystalline silicon film as a starting point is interruptedly carried out along the unidirectional direction,
• forming the microcrystalline silicon film and the crystallized silicon film alternately along the unidirectional direction.