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US 12,143,080 B2Granted
Offset correction circuit
AssigneeMitsubishi Electric Corporation
InventorTomokazu Kojima
Life of this patent
Estimating the term…
Abstract
A first correction voltage generation circuit provides a first positive or negative correction voltage for correcting an input voltage. A second correction voltage generation circuit provides a second correction voltage identical in polarity to the first correction voltage in accordance with the first correction voltage. The second correction voltage is generated to have a temperature coefficient reverse in polarity to a temperature coefficient of the first correction voltage.
Claims12
An offset correction circuit comprising:
- a first correction voltage generation circuit to provide a first correction voltage for correcting an input voltage, the first correction voltage being positive or negative;
- a second correction voltage generation circuit to provide, in accordance with the first correction voltage, a second correction voltage identical in polarity to the first correction voltage, the second correction voltage having a second temperature coefficient reverse in polarity to a first temperature coefficient of the first correction voltage;
- and
- an output stage to generate an output voltage in accordance with a voltage obtained by adding the input voltage and a sum of the first correction voltage and the second correction voltage, wherein
- the first correction voltage generation circuit includes:
- a first field effect transistor including a gate to receive input of the input voltage,
- a second field effect transistor including a gate connected to a node where a first voltage resulting from addition of the first correction voltage to the input voltage is provided
- a first current source group for passage of a comparable current through the first field effect transistor and the second field effect transistor, and
- a transistor size ratio control mechanism to variably control a ratio of a transistor size of the second field effect transistor to a transistor size of the first field effect transistor.
6 more elements
An offset correction circuit comprising:
- a first correction voltage generation circuit to provide a first correction voltage for correcting an input voltage, the first correction voltage being positive or negative;
- and
- a second correction voltage generation circuit to provide, in accordance with the first correction voltage, a second correction voltage identical in polarity to the first correction voltage, the second correction voltage having a second temperature coefficient reverse in polarity to a first temperature coefficient of the first correction voltage, wherein
- the second correction voltage generation circuit includes
- a third field effect transistor including a gate to receive input of a voltage resulting from addition of the input voltage and the first correction voltage,
- a first variable resistor connected in series to the third field effect transistor between a first node and a second node,
- a second variable resistor reverse in polarity of a temperature coefficient to the first variable resistor,
- a fourth field effect transistor connected in series to the second variable resistor between a third node and the first node,
- a second current source group for passage of a comparable current to each of the second node and the third node, and
- an electrical resistance difference variable mechanism to variably control electrical resistance values of the first and second variable resistors such that a voltage difference between the gate of the third field effect transistor and the first node is comparable to a voltage difference between a gate of the fourth field effect transistor and the first node.
7 more elements
An offset correction circuit comprising:
- a first correction voltage generation circuit to provide a first correction voltage for correcting an input voltage, the first correction voltage being positive or negative;
- and
- a second correction voltage generation circuit to provide, in accordance with the first correction voltage, a second correction voltage identical in polarity to the first correction voltage, the second correction voltage having a second temperature coefficient reverse in polarity to a first temperature coefficient of the first correction voltage, wherein
- the second correction voltage generation circuit includes
- a third field effect transistor including a gate to receive input of a voltage resulting from addition of the input voltage and the first correction voltage,
- a first variable resistor connected in series to the third field effect transistor between a first node and a second node,
- a second variable resistor,
- a fourth field effect transistor connected in series to the second variable resistor between a third node and the first node,
- a second current source group for passage of a comparable current to each of the second node and the third node, and
- an electrical resistance difference variable mechanism to variably control electrical resistance values of the first and second variable resistors such that a voltage difference between the gate of the third field effect transistor and the first node is comparable to a voltage difference between a gate of the fourth field effect transistor and the first node, and
- the second current source group includes
- a first current source to supply an output current in accordance with an electrical resistance value of a bias resistive element to the first node,
- a second current source connected to the second node, and
- a third current source connected to the third node and being comparable in output current characteristic to the second current source, and
- the first current source includes a bias resistance variable mechanism to variably control a polarity of a temperature coefficient of the bias resistive element.
12 more elements
Dependencies are inferred from the claim text.