Semiconductor laser device

A semiconductor laser device that emits laser light, the semiconductor laser device comprising:

• a semiconductor laminate body including an active layer that generates the laser light;
• an insulating layer disposed above the semiconductor laminate body;
• a first electrode disposed above the semiconductor laminate body;
• a second electrode disposed above the first electrode and the insulating layer;
• and
• an adhesion layer disposed between the second electrode and the insulating layer, wherein:
• the semiconductor laminate body includes a front end surface through which the laser light is emitted, and a rear end surface opposite the front end surface,
• the insulating layer includes a first opening extending in a first direction that is a direction from the front end surface toward the rear end surface,
• the adhesion layer includes a second opening that at least partially overlaps with the first opening in a plan view of the adhesion layer,
• the first electrode is at least partially disposed inside the first opening and the second opening in the plan view of the adhesion layer,
• the second electrode and the adhesion layer are disposed above the insulating layer between the first opening and at least one of the front end surface or the rear end surface,
• the semiconductor laminate body includes a ridge portion, and
• a perimeter of the first opening is located on an upper surface of the ridge portion and at a distance of at least 0.5 μm and less than 2.0 μm from a position at which the upper surface and a side surface of the ridge portion come into contact.

A semiconductor laser device that emits laser light, the semiconductor laser device comprising:

• a semiconductor laminate body including an active layer that generates the laser light;
• an insulating layer disposed above the semiconductor laminate body;
• a first electrode disposed above the semiconductor laminate body;
• a second electrode disposed above the first electrode and the insulating layer;
• and
• an adhesion layer disposed between the second electrode and the insulating layer, wherein:
• the semiconductor laminate body includes a front end surface through which the laser light is emitted, and a rear end surface opposite the front end surface,
• the insulating layer includes a first opening extending in a first direction that is a direction from the front end surface toward the rear end surface,
• the adhesion layer includes a second opening that at least partially overlaps with the first opening in a plan view of the adhesion layer,
• the first electrode is at least partially disposed inside the first opening and the second opening in the plan view of the adhesion layer,
• the second electrode and the adhesion layer are disposed above the insulating layer between the first opening and at least one of the front end surface or the rear end surface,
• the semiconductor laminate body includes a ridge portion, and
• the following expression holds:
• 19°<arctan(Hr/Wi)×180/π<54°
• where Wi denotes a distance from the first electrode to a position where a side surface and an upper surface of the ridge portion come into contact, and Hr denotes a height of the ridge portion.