Imaging system with selective readout for visible-infrared image capture

An imaging system, comprising:

• a sensor wafer, including:
• a plurality of pixels arranged in rows and columns, the plurality of pixels including at least a first pixel and a second pixel positioned in a first row included in the rows, wherein each pixel included in the plurality of pixels includes a respective photodiode configured to accumulate image charge in response to incident light;
• and
• a first transfer control line associated with the first row, wherein the first transfer control line is coupled to both a first transfer gate of the first pixel and a second transfer gate of the second pixel;
• and
• a logic wafer coupled to the sensor wafer, the logic wafer including:
• a plurality of storage capacitors, each associated with a respective one of the plurality of pixels of the sensor wafer, wherein the plurality of storage capacitors includes a first storage capacitor associated with the first pixel and a second storage capacitor associated with the second pixel;
• a first storage control line coupled to a first storage gate associated with the first pixel, wherein the first storage gate is included in a first storage transistor coupled to the first storage capacitor;
• and
• a second storage control line coupled to a second storage gate associated with the second pixel, and wherein the second storage gate is included in a second storage transistor coupled to the second storage capacitor.