Method for forming coating layer having plasma resistance

A method of forming a coating layer having plasma resistance, the method comprising steps of:

• preparing a substrate by placing the substrate in a substrate fixing device inside a process chamber;
• evaporating a Y2O3 deposition material provided in a solid form in an electron beam source by irradiating an electron beam on the Y2O3 deposition material;
• generating radical particles having activation energy by injecting a process gas containing oxygen for forming radicals into a RF energy beam source;
• setting a process variable of the RF energy beam source;
• irradiating an RF energy beam including the radical particles generated in the RF energy beam source, toward the substrate;
• reaction in which Y2O3 deposition particles in a gas phase and the oxygen radical particles react in an ion atmosphere formed between the RF energy beam source and the substrate, and Y2O3 deposition particles having a modified atomic ratio are generated;
• depositing a thin film in which the evaporated deposition material is deposited on the substrate by being assisted by the RF energy beam;
• densifying the thin film in which the deposition material deposited on the substrate forms a densified film by ion bombardment of the RF energy beam;
• and
• wherein the step of setting the process variable comprises adjusting hardness and surface roughness of the coating layer by controlling an ion current density (μA/cm2) and ion acceleration energy (eV), which are process variables of the RF energy beam source and irradiated into the substrate.