Conductive bond structure to increase membrane sensitivity in MEMS device

A method for forming an integrated chip, the method comprising:

• forming an electrode within a lower dielectric structure;
• depositing a stack of dielectric layers over the lower dielectric structure;
• patterning the stack of dielectric layers to form an upper dielectric structure, wherein the electrode is disposed between opposing sidewalls of the upper dielectric structure;
• and
• bonding a microelectromechanical system (MEMS) substrate to the lower dielectric structure, wherein a bonding structure is disposed between the MEMS substrate and lower dielectric structure, wherein the bonding structure comprises a different material than the upper dielectric structure, and wherein a bottom surface of the bonding structure is disposed below a bottom surface of the upper dielectric structure.

A method for forming an integrated chip, the method comprising:

• forming an interconnect structure over a substrate;
• forming one or more dielectric layers over the interconnect structure;
• patterning the one or more dielectric layers while the one or more dielectric layers are disposed on the interconnect structure to define a dielectric structure having a first thickness;
• forming an isolation dielectric layer on a microelectromechanical system (MEMS) substrate;
• forming a conductive bond ring structure on the MEMS substrate, wherein the conductive bond ring structure has a second thickness greater than the first thickness;
• and
• performing a bonding process to bond the conductive bond ring structure to the interconnect structure, wherein the bonding process seals a first cavity disposed between inner sidewalls of the conductive bond ring structure.