Method for producing photosemiconductor device
AssigneeMitsubishi Electric Corporation
InventorAtsushi Era
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Abstract
A method of manufacturing an optical semiconductor device includes a step of forming semiconductor layers on the surface of an n-type InP substrate; an etching step of forming an active layer ridge by etching part of the semiconductor layers; a cleaning step of removing Si having adhered to the surface of the etched semiconductor layers while feeding a source gas for the crystal growth and an etching gas; and a crystal growth step of forming buried layers along both sidewalls of the active layer ridge at a processing temperature higher than that in the cleaning step, and the cleaning step is performed with the ridge being kept in shape.
Claims20
A method of manufacturing an optical semiconductor device, comprising:
- a step of forming semiconductor layers on a surface of a substrate;
- an etching step of forming a ridge by etching part of the semiconductor layers;
- a cleaning step of removing substances having adhered to surfaces of the etched semiconductor layers while feeding a source gas for crystal growth and an etching gas;
- and
- a crystal growth step of forming current blocking layers both sidewalls of the ridge at a processing temperature higher than a temperature in the cleaning step.
Dependencies are inferred from the claim text.