Organometallic photoresists for DUV or EUV lithography
AssigneeInternational Business Machines Corporation
InventorsGerhard Ingmar Meijer, Valery Weber, Peter Willem Jan Staar
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Abstract
Organometallic photoresists suitable for use in deep ultraviolet (DUV) or extreme ultraviolet (EUV) lithography are provided. The organometallic photoresists contain an organometallic molecule having least a metal element M selected from the group consisting of Bi, Sb, and mixtures thereof, and having an oxidation state of 3+, and at least one polymerizable group R. A method of forming a patterned materials feature on a substrate utilizing the organometallic photoresist compositions is also provided.
Claims15
An organometallic photoresist composition comprising:
- a first organometallic molecule having at least Bi as a metal element, and having an oxidation state of 3+, and at least one first organometallic molecule polymerizable group R, wherein the first organometallic molecule is sensitive to DUV and EUV radiation;
- a second organometallic molecule having at least Sb as a metal element, and having an oxidation state of 3+, and at least one second organometallic molecule polymerizable group R, wherein the second organometallic molecule is sensitive to DUV and EUV radiation;
- a solvent that dissolves the first and second organometallic molecules.
The organometallic photoresist composition according to 2, wherein all R groups are polymerizable groups.
Dependencies are inferred from the claim text.