Resin, photoresist composition, and method of manufacturing semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSiao-Shan Wang, Ching-Yu Chang, Chin-Hsiang Lin
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Abstract
A method for manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist. The photoresist composition includes a photoactive compound and a resin comprising a radical-active functional group and an acid labile group.
Claims20
A photoresist composition, comprising:
- a photoactive compound;
- and
- a resin comprising a radical-active functional group and an acid labile group,
- wherein the radical-active functional group is an alkene group or an alkyne group,
- wherein the resin further comprises one or more linker groups connecting the radical-active functional group to the resin, and
- wherein the linker groups include an electron-withdrawing group, and the electron-withdrawing group is one or more selected from the group consisting of
- wherein R is a C1-C10 linear, branched, or cyclic alkyl group.
A resin, comprising monomer units having a radical-active functional group and an acid labile group,
- wherein the radical-active functional group is an alkene group or an alkyne group, and
- wherein the resin comprises one or more monomer units selected from the group consisting of:
A photoresist composition, comprising:
- a photoactive compound;
- and
- a resin including a radical-active functional group, an acid labile group, and a sensitizer group,
- wherein the radical-active functional group is an alkene group or an alkyne group,
- the radical-active functional group is connected to the sensitizer group by a first linker group,
- the resin further comprises one or more second linker groups connecting the radical-active functional group to the resin, and
- the first and second linker groups are electron-withdrawing groups selected from the group consisting of
- wherein R is a C1-C10 linear, branched, or cyclic alkyl group.
Dependencies are inferred from the claim text.