Semiconductor device and method for manufacturing a semiconductor device
AssigneesSTMicroelectronics S.r.l., STMicroelectronics International N.V.
InventorsEnri Duqi, Lorenzo Baldo, Paolo Ferrari, Benedetto Vigna, Flavio Francesco Villa, Laura Maria Castoldi, Ilaria Gelmi
Life of this patent
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Abstract
A semiconductor device includes: a substrate; a transduction microstructure integrated in the substrate; a cap joined to the substrate and having a first face adjacent to the substrate and a second, outer, face; and a channel extending through the cap from the second face to the first face and communicating with the transduction microstructure. A protective membrane made of porous polycrystalline silicon permeable to aeriform substances is set across the channel.
Claims19
A semiconductor device, comprising:
- a substrate;
- a transduction microstructure in the substrate;
- a cap coupled to the substrate and having a first face facing the substrate and an outer second face;
- a channel extending through the cap from the second face to the first face and in fluid communication with the transduction microstructure, the channel including an internal sidewall;
- a protective membrane of porous polycrystalline silicon, the protective membrane having pores with an equivalent diameter comprised between 5 nm and 50 nm and being across the channel and on the internal sidewall of the channel.
A device, comprising:
- a substrate;
- a chamber in the substrate;
- a membrane aligned with the chamber, wherein the membrane has pores with an equivalent diameter comprised between 5 nm and 50 nm;
- a cap that includes:
- a first surface facing the membrane;
- a second surface that is opposite the first surface;
- an opening from the first surface to the second surface;
- a porous silicon layer that covers the opening.
A device, comprising:
- a substrate;
- a transduction microstructure in the substrate;
- and
- a cap coupled to the substrate and having a first face and a second face opposite the first face, wherein the cap includes:
- a first layer facing the second face of the cap;
- a second layer on the first layer;
- a third layer opposite to the first layer and adjacent to the second layer;
- a porous layer covering the third layer;
- and
- a plurality of channels extending from the second face to the first face through the first, second, and third layers;
- a plurality of membranes in the porous layer across the plurality of channels.
Dependencies are inferred from the claim text.