Magnetic memory element including perpendicular enhancement layers and dual oxide cap layers

A magnetic memory element comprising:

• a magnetic free layer structure including:
• first and second magnetic free layers having a variable magnetization direction substantially perpendicular to layer planes thereof, the first and second magnetic free layers each comprising cobalt, iron, and boron;
• and
• a first perpendicular enhancement layer (PEL) interposed between the first and second magnetic free layers;
• an insulating tunnel junction layer formed adjacent to the first magnetic free layer opposite the first PEL;
• a magnetic reference layer structure including:
• first and second magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof, the first magnetic reference layer comprising cobalt, iron, and boron and formed adjacent to the insulating tunnel junction layer opposite the first magnetic free layer;
• and
• a second PEL interposed between the first and second magnetic reference layers;
• an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the second PEL;
• a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer opposite the second magnetic reference layer, the magnetic fixed layer having a second invariable magnetization direction substantially opposite to the first invariable magnetization direction;
• a first non-magnetic layer comprising oxygen and molybdenum and formed adjacent to the second magnetic free layer opposite the first PEL;
• and
• a second non-magnetic layer comprising oxygen and magnesium and formed adjacent to the first non-magnetic layer opposite the second magnetic free layer.

A magnetic memory element comprising:

• a magnetic free layer structure including:
• first and second magnetic free layers having a variable magnetization direction substantially perpendicular to layer planes thereof, the first and second magnetic free layers each comprising cobalt, iron, and boron;
• and
• a first perpendicular enhancement layer (PEL) interposed between the first and second magnetic free layers;
• an insulating tunnel junction layer formed adjacent to the first magnetic free layer opposite the first PEL;
• a magnetic reference layer structure including:
• first and second magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof, the first magnetic reference layer comprising cobalt, iron, and boron and formed adjacent to the insulating tunnel junction layer opposite the first magnetic free layer;
• and
• a second PEL interposed between the first and second magnetic reference layers;
• an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the second PEL;
• a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer opposite the second magnetic reference layer, the magnetic fixed layer having a second invariable magnetization direction substantially opposite to the first invariable magnetization direction;
• a first non-magnetic layer comprising oxygen and tantalum and formed adjacent to the second magnetic free layer opposite the first PEL;
• and
• a second non-magnetic layer comprising oxygen and magnesium and formed adjacent to the first non-magnetic layer opposite the second magnetic free layer.