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US 12,132,448 B2Granted
Gallium nitride transimpedance amplifier
AssigneeChang Gung University
InventorsCher-Ming Tan, Vimal Kant Pandey
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Abstract
The present invention relates to a gallium nitride transimpedance amplifier, as an essential electronic circuit in the proton beam therapy. Because gallium nitride is more tolerant to the secondary radiation generated during the proton beam therapy, it has high reliability and increases the reliability of the overall system.
Claims10
A gallium nitride amplifier circuit, wherein said gallium nitride amplifier circuit accepts a plurality of currents and outputs a plurality of voltages, and
- wherein said gallium nitride amplifier circuit comprises a first transistor, a second transistor, a third transistor, a first resistor and a second resistor, said first resistor electrically connecting said second resistor and a drain electrode of said first transistor, a gate electrode of said third transistor electrically connecting a source electrode of said first transistor and a drain electrode of said second transistor, said second resistor electrically connecting a gate electrode of said first transistor and a drain electrode of said third transistor, an input current flowing through a source electrode of said first transistor.
The gallium nitride amplifier circuit electrically connecting a charge division module, comprising:
- receiving a first current, a second current, a third current and a fourth current;
- and
- outputting a first voltage, a second voltage, a third voltage and a fourth voltage,
- wherein a bandwidth range of said gallium nitride amplifier circuit comprises 0 MHZ to 200 MHZ.
1 more element
Dependencies are inferred from the claim text.