CdSeTe photovoltaic devices with interdigitated back contact architecture
AssigneesAlliance for Sustainable Energy, LLC, Bowling Green State University
InventorsDavid Scott Albin, Marco Nardone, Gregory Frank Pach
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Abstract
Disclosed herein are CdSeTe photovoltaic devices having interdigitated back contact architecture for use in polycrystalline thin films in photovoltaic devices.
Claims18
A method for making a polycrystalline CdSeTe device comprising an interdigitated back contact architecture wherein the CdSeTe device comprises a CdSeTe film and wherein the CdSeTe device exhibits a minority carrier lifetime of at least 100 ns.
A method for making a polycrystalline CdSeTe device comprising an interdigitated back contact architecture wherein the method comprises a first step of a deposition of a first metal layer to a thickness of from about 100 to about 500 nm onto a substrate;
- and a second step of a deposition of an electrically insulating layer onto a metal/metal oxide layer;
- and a third step of a deposition of a 100 nm to 500 nm metal contact layer;
- and a fourth step of cutting through a top metal/metal oxide and insulating layers to expose a bottom metal/metal oxide layer.
A method for making a polycrystalline CdSeTe device comprising an interdigitated back contact architecture wherein the method comprises, a first step of a vacuum deposition of Cd(SexTe1-x) onto an interdigitated back contact structure heated to about 450° C.;
- and a second step of annealing the interdigitated back contact and Cd(SexTe1-x) structure at 500-600° ° C. while suspended over a powder comprising Cd(SexTe1-x) wherein x is from zero to 0.4;
- and a third step of annealing the interdigitated back contact and Cd(SexTe1-x) structure at from about 450 to about 525° C. while suspended over a CdCl2 containing powder in an inert gas atmosphere for about 10 to 20 minutes;
- and a fourth step of coating the interdigitated back contact and Cd(SexTe1-x) structure with a transparent passivation Al2O3 layer of from about 20 nm to about 100 nm thickness;
- and a fifth step of treating the resulting device structure to a CdCl2 anneal at a temperature of between about 400 and about 450° C.
A method for making a polycrystalline CdSeTe device comprising an interdigitated back contact architecture wherein the method comprises a first step of a non-vacuum deposition of colloidal nanocrystalline Cd(SexTe1-x) onto an interdigitated back contact structure.
Dependencies are inferred from the claim text.