Semiconductor manufacturing apparatus and method of manufacturing semiconductor device
AssigneeKioxia Corporation
InventorsMotoki Fujii, Hiroshi Kubota, Fumiki Aiso
Life of this patent
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Abstract
In one embodiment, a semiconductor manufacturing apparatus includes a substrate processor configured to process a substrate with a gas of a first substance and a gas of a second substance, and discharge a first gas including the first substance and/or the second substance. The apparatus further includes a disposer configured to discard the first gas discharged from the substrate processor. The apparatus further includes a recoverer configured to generate a second gas including the second substance by using the first substance in the first gas discharged from the substrate processor, and supply the second gas to the substrate processor.
Claims4
A semiconductor manufacturing apparatus comprising:
- a substrate processor configured to process a substrate with a gas of a first substance and a gas of a second substance, and discharge a first gas including the first substance and/or the second substance;
- a disposer configured to discard the first gas discharged from the substrate processor;
- and
- a recoverer configured to generate a second gas including the second substance by using the first substance in the first gas discharged from the substrate processor, and supply the second gas to the substrate processor,
- wherein the recoverer includes:
- a generator configured to generate the second substance by using the first substance in the first gas;
- and
- a container configured to contain a liquid including the second substance generated by the generator, and
- wherein the apparatus further comprises:
- a measuring instrument configured to measure a liquid level of a liquid in the container;
- a switch configured to switch a discharge destination of the first gas discharged from the substrate processor between the disposer and the recoverer;
- and
- a controller configured to control the switch based on the liquid level measured by the measuring instrument.
A semiconductor manufacturing apparatus comprising:
- a substrate processor configured to process a substrate with a gas of a first substance and a gas of a second substance, and discharge a first gas including the first substance and/or the second substance;
- a disposer configured to discard the first gas discharged from the substrate processor;
- and
- a recoverer configured to generate a second gas including the second substance by using the first substance in the first gas discharged from the substrate processor, and supply the second gas to the substrate processor,
- wherein the recoverer includes:
- a container configured to contain the first gas, and
- wherein the apparatus further comprises:
- a measuring instrument configured to measure a pressure of a gas in the container;
- a switch configured to switch a discharge destination of the first gas discharged from the substrate processor between the disposer and the recoverer;
- and
- a controller configured to control the switch based on the pressure measured by the measuring instrument.
A method of manufacturing a semiconductor device, comprising:
- processing a substrate in a substrate processor by using a gas of a first substance and a gas of a second substance, and discharging a first gas including the first substance and/or the second substance from the substrate processor;
- discarding, with a disposer, the first gas discharged from the substrate processor;
- and
- generating, with a recoverer, a second gas including the second substance by using the first substance in the first gas discharged from the substrate processor, and supplying the second gas to the substrate processor,
- wherein the first substance is D2 or H2 where H represents hydrogen and D represents deuterium, and the second substance is D2O or H2O where O represents oxygen.
Dependencies are inferred from the claim text.