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US 12,129,569 B2Granted
Method for conditioning semiconductor processing chamber components
AssigneeLam Research Corporation
InventorsLin Xu, David Joseph Wetzel, John Daugherty, Hong Shih, Satish Srinivasan, Yuanping Song, Johnny Pham, Yiwei Song, Christopher Kimball
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Abstract
A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10−6/K. A metal oxide layer is then disposed over a surface of the component body.
Claims7
A component for use in a semiconductor processing chamber, comprising:
- a component body made of an electrically conductive silicon containing material having coefficient of thermal expansion of less than 10.0×10−6/K;
- a conformal aluminum barrier layer over a surface of the component body;
- and
- an aluminum oxide layer disposed over a surface of the aluminum barrier layer, wherein the aluminum oxide layer has a thickness between about 12 μm to 38 μm.
1 more element
Dependencies are inferred from the claim text.